NTE5638, NTE563806, NTE563808 TRIAC 8A Isolated Tab Description: The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, voidfree glass passivated chips. This device is a bidirectional triode thyristor and may be switched from offstate to conduction for either polarity of applied voltage with positive or negative gate trigger current. The NTE5638 is de- signed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, T = +110C, Note 1), V J DRM NTE5638 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE563806 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE563808 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS OnState Current (T = +80C, Conduction Angle of 360C), I . . . . . . . . . . . . . . . . . . 8A C T(RMS) Peak Surge (NonRepetitive) OnState Current (One Cycle, 50Hz or 60Hz), I . . . . . . . . . . 80A TSM Peak GateTrigger Current (3 s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GTM Peak GatePower Dissipation (I I for 3 s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Average GatePower Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +110C stg Typical Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W thJC Note 1. All values apply in either direction. Electrical Characteristics: (T = +25C, Maximum Ratings unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I V = Max, Gate Open, T = +110C 0.5 mA DRM DRM J Max. OnState Voltage V I = 8A 1.6 V TM T DC Holding Current I Gate Open, Note 1 25 mA H Critical RateofRise of OffState Critical V = V , Gate Open, T = +100C, 30 V/ s D DRM C Voltage dv/dt Note 1 Critical RateofRise of Commutation Commutation V = V , I = 8A, T = +80C, 2 V/ s D DRM T C Voltage dv/dt Gate Unenergized, Note 1 DC Gate Trigger Current I V = 12V, R = 60 10 mA GT D L T (+) Gate (+), T () Gate () 2 2 T (+) Gate (), T () Gate (+) 2 2 Note 1. All values apply in either direction.Electrical Characteristics (Contd): (T = +25C, Maximum Ratings unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DC Gate Trigger Voltage V V = 12V, R = 60 2.2 V GT D L GateControlled TurnOn Time t V = V , I = 80mA, t = 0.1 s, 2.2 s gt D DRM GT r i = 10A (Peak) T .420 (10.67) Max .110 (2.79) Isolated .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT Gate 1 .100 (2.54) MT 2