Product Information

NTE5722

NTE5722 electronic component of NTE

Datasheet
Module; double series; 1.2kV; 90A; 21MM; Ufmax:1.4V; Ifsm:1.95kA

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 115.0875 ea
Line Total: USD 115.09

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 115.0875
10 : USD 82.7496
25 : USD 77.2308
50 : USD 72.4032

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 107.2105

     
Manufacturer
Product Category
Electrical Mounting
Mounting
Case
Semiconductor Structure
Type Of Module
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
Gate Current
LoadingGif

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NTE5722 Powerblock Module Features: Electrically Isolated Base Plate Pressure Contact Technology with Increased Power Cycling Capability Space and Weight Savings Applications: AC/DC Motor Drives Various Rectifiers DC Supply for PWM Inverter Ratings and Characteristics: (T = +125C unless otherwise specified) J Maximum Mean On State Current, I T(AV) (T = +85C, 180, Half Sine Wave, 50Hz, Single Side Cooled) .................... 90A C Maximum RMS On State Current, I ............................................ 141A T(RMS) Maximum Repetitive Peak OffState Voltage (V = 1400V, t = 10ms), V .......... 1200V DSM p DRM Maximum Repetitive Peak Reverse Voltage (V = 1400V, t = 10ms), V ........... 1200V RSM p RRM Maximum Repetitive Peak Current, I , I ....................................... 10mA DRM RRM Maximum Surge On State Current (10ms Half Sine Wave, V = 720V), I ............... 2KA R TSM 2 2 2 3 Maximum I t for Fusing Coordination (10ms Half Sine Wave, V = 720V), I t ...... 20.4A s * 10 R Maximum Threshold Voltage, V ................................................... 0.8V TO OnState Slope Resistance, r ................................................... 3.01m T Maximum Peak On State Voltage (I = 270A), T = +25C), V ....................... 1.7V TM J TM Critical Rate of Rise of OffState Voltage (V = 804V), dv/dt ........................ 800V/s DM Critical Rate of Rise of On State Current, di/dt (I = 180A, Gate Source 1.5A, t 0.5s Repetitive) ......................... 100A/s TM r RMS Isolation Voltage (50Hz, t = 1s Min, I = 1mA Max), V ........................ 2500V ISO ISO Storage Temperature Range, T .......................................... 40 to +125C stg Thermal Resistance, Junction toCase (Single Side Cooled), R ................. 0.28C/W thJC Thermal Resistance, Case toSink (Single Side Cooled), R ..................... 0.15C/W thCS Typical Thermal Connection Torque, F .......................................... 4.0N m m Typical Mounting Torque, F .................................................... 6.0N m m Rev. 111Electrical Specifications: Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current I 30 100 mA V = 12V, I = 1A, T = +25C GT A A J Gate Trigger Voltage V 1.0 2.5 V GT Holding Current I 20 100 mA H Non Trigger Gate Voltage V V = 804V, T = +125C 0.2 V GD DM J Circuit Diagram G2 K2 AC + + G2 AC K2 K1 G1 .787 (20.0) .787 .550 (14.0) .590 (15.0) (20.0) .787 .500 (20.0) (12.7) 3.150 (79.9) .393 .244 (6.2) Dia (10.0) M5 Screw (3 Places) .110 (.028) x .036 (.009) Faston Terminals 1.195 1.180 (30.0) (29.9) 3.620 (91.9)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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