Product Information

NTE5850

NTE5850 electronic component of NTE

Datasheet
DIODE, STANDARD RECOVERY, 6A, 50V, DO-20; DIODE, STANDARD RECOVERY, 6A, 50V, DO-203AA; Diode Type:Standard Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:50V; Forward Current If(AV):6A; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:-
Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 11.907 ea
Line Total: USD 35.72

0 - Global Stock
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 10
Multiples : 1
10 : USD 3.565
100 : USD 2.833
250 : USD 2.7517
500 : USD 2.6704
1000 : USD 2.5213
2500 : USD 2.4535
5000 : USD 2.4264
7500 : USD 2.3315

0 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 3.5305

0 - WHS 3


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 4.5735
3 : USD 4.1176
6 : USD 2.992
16 : USD 2.8353

Read More Specifications

     
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Additional Infomation About Product

NTE5850 thru NTE5869 Silicon Power Rectifier Diode, 6 Amp, DO4 Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type pack- age designed for battery chargers, converters, power supplies, and machine tool controls. Features: High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode toCase or Cathode toCase Style Ratings and Characteristics: Average Forward Current (T = +158C Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A C F(AV) Maximum Forward Surge Current, I FSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A 2 Fusing Current, I t 2 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A s 2 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A s 2 2 Fusing Current, I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1270A s Maximum Reverse Recovery Voltage Range, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1000V RRM Voltage Ratings: (T = +175C) J V Max V Max V Max. V I Max NTE Type Number RRM RSM R R(SR) RM Repetitive Peak NonRepetitive Peak Direct Reverse Minimum Avalanche Reverse Current Cathode Anode Reverse Volt. Reverse Voltage Voltage Voltage Rated V RRM to Case to Case (V) (V) (V) (V) (mA) 5850 5851 50 75 50 12 5852 5853 100 150 100 12 5854 5855 200 275 200 12 5856 5857 300 385 300 12 5858 5859 400 500 400 500 12 5860 5861 500 613 50 613 12 5862 5863 600 725 600 725 12 5866 5867 800 950 800 950 12 5868 5869 1000 1200 1000 1200 12Electrical Specifications: Parameter Symbol Test Conditions Rating Unit Maximum Average Forward Current I 180 sinusoidal condition, T = +158C Max 6 A F (AV) C Maximum RMS Forward Current I 9.5 A F(RMS) Maximum Peak OneCycle I t = 10ms Sinusoidal Half Wave, 134 A FSM NonRepetitive Surge Current No voltage reapplied t = 8.3ms 141 A t = 10ms 159 A 100% rated voltage reapplied, T = +175C J t = 8.3ms 167 A 2 2 2 Maximum I t for Individual Device I t t = 10ms 100% rated voltage reapplied, 127 A s Fusing Initial T = +175C J 2 t = 8.3ms 116 A s 2 2 2 t = 0.1 to 10ms, No voltage reapplied, Note 1 1270 Maximum I t I t A t Maximum Peak Forward Voltage V I = 19A, T = +25C 1.10 V FM FM J Maximum Value of Threshold V T = +175C 0.60 V M (TO) J Voltage Maximum Value of Forward Slope r T = +175C 17.2 m t J Resistance 2 2 Note 1. I t for time t = I t t x x Thermal Mechanical Specifications: Parameter Symbol Test Conditions Rating Unit Maximum Operation Junction Temperature T 65 to + 175 C J Maximum Storage Temperature T 65 to + 200 C stg Maximum Internal Thermal Resistance R DC operation 2.5 K/W thJC Junction toCase Thermal Resistance, CasetoSink R Mounting surface flat, smooth and 0.25 K/W thCS greased Mounting Torque T Nonlubricated threads 1.2 1.5 mN (10.5 13.5) (inlb) Approximate Weight wt 11 (0.25) g (oz) .250 (6.35) Max .437 (11.1) .175 (4.45) Max Max .060 (1.52) Dia Min 1032 NF2A .405 (10.3) .453 .424 (10.8) Max (11.5) Dia Max Max 1.250 (31.75) Max

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NTE may also be referenced as

NTE ELECTRONICS
NTE ELECTRONICS, INC.

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