2N3702 NTE

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X-On Electronics has gained recognition as a prominent supplier of 2N3702 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3702 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.

2N3702

Manufacturer:

NTE

Category:

Bipolar Transistors - BJT

Description:

TRANSISTOR, BIPOLAR, PNP, -80V, TO-92-3;; TRANSISTOR, BIPOLAR, PNP, -80V, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:120MHz; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:35hFE; MSL:-

Datasheet:

2N3702 Datasheet (PDF)

Shipping Charges:

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Price (USD)

170: USD 0.5487 ea
Line Total: USD 93.28

Availability : 0

Qty	Unit Price
170	$ 0.5487
200	$ 0.3503
500	$ 0.257

2N3702 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability0

Ship by Wed. 24 Jun to Tue. 30 Jun

MOQ : 170
Multiples : 1

Qty	Unit Price
170	$ 0.5487
200	$ 0.3503
500	$ 0.257

Specifications

Manufacturer NTENTE
Product Category Bipolar Transistors - BJTBipolar Transistors - BJT
Transistor Polarity PNPPNP
Brand NTENTE
Collector Emitter Voltage Vbrceo - 80 V- 80 V
Transition Frequency Ft 120Mhz120Mhz
Power Dissipation Pd 600 mW600 mW
Dc Collector Current - 500 mA- 500 mA
Dc Current Gain Hfe 35hFE35hFE

We are delighted to provide the 2N3702 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3702 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE289A (NPN) & NTE290A (PNP) Silicon Complementary Transistors Audio Power Amplifier Features: High Breakdown Voltage: V = 80V Min (BR)CEO High Current: I = 500mA C Low Saturation Voltage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current , I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherewise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 10 A, I = 0 100 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = Open 80 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 40V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h V = 5V, I = 50mA 100 200 FE (1) CE C h V = 5V, I = 400mA (Pulse) 35 FE (2) CE C CollectorEmitter Saturation Voltage V CE(sat) NTE289A I = 400mA, I = 40mA 0.2 0.6 V C B NTE290A 0.25 0.60 V CurrentGain Bandwidth Product f V = 10V, I = 10mA 120 MHz T CE C Output Capacitance C ob NTE289A V = 10V, f = 1MHz 5 pF CB NTE290A 9 pF Note 1. NTE289AMP is a matched pair of NTE289A with their DC Current Gain (h ) matched to FE within 10% of each other. Note 2. NTE290AMCP is a matched complementary pair containing 1 each of NTE289A (NPN) and NTE290A (PNP)..135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICSmay also be referenced as

NTE ELECTRONICS, INC.

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