NTE5810 & NTE5811, NTE5870 thru NTE5891 Silicon Power Rectifier Diode, 12 Amp, DO4 Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and ma- chine tool controls. Features: High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode toCase or Cathode toCase Style Ratings and Characteristics: Average Forward Current (T = +144C Max), I .................................... 12A C F(AV) Maximum Forward Surge Current, I FSM 50Hz ...................................................................... 230A 60Hz ...................................................................... 240A 2 Fusing Current, I t 2 50Hz .................................................................... 260A s 2 60Hz .................................................................... 240A s 2 2 Fusing Current, I t ......................................................... 3580A s Maximum Reverse Recovery Voltage Range, V .............................. 50 to 1200V RRM Voltage Ratings: (T = +175C, Note 1) J NTE Type Number V Max V Max V Max. V I Max RRM RSM R R(SR) RM Repetitive Peak NonRepetitive Peak Direct Reverse Minimum Avalanche Reverse Current Cathode Anode Reverse Volt. Reverse Voltage Voltage Voltage Rated V RRM to Case to Case (V) (V) (V) (V) (mA) 5870 5871 50 75 50 12 5872 5873 100 150 100 12 5874 5875 200 275 200 12 5876 5877 300 385 300 12 5878 5879 400 500 400 500 12 5880 5881 500 613 500 626 12 5882 5883 600 725 600 750 12 5886 5887 800 950 800 950 12 5890 5891 1000 1200 1000 1150 12 5810 5811 1200 1400 1200 1350 12Electrical Specifications: Parameter Symbol Test Conditions Rating Unit Maximum Average Forward Current I 180 sinusoidal condition, T = +144C Max 12 A F (AV) C Maximum RMS Forward Current I 19 A F(RMS) Maximum Peak OneCycle I t = 10ms Sinusoidal Half Wave, 225 A FSM NonRepetitive Surge Current No voltage reapplied t = 8.3ms 235 A t = 10ms 265 A 100% rated voltage reapplied, T = +175C J t = 8.3ms 280 A 2 2 2 Maximum I t for Individual Device I t t = 10ms 100% rated voltage reapplied, 351 A s Fusing Initial T = +175C J 2 t = 8.3ms 320 A s 2 2 2 t = 0.1 to 10ms, No voltage reapplied, Note 1 3511 Maximum I t I t A t Maximum Peak Forward Voltage V I = 38A, T = +25C 1.26 V FM FM J Maximum Value of Threshold V T = +175C 0.68 V M (TO) J Voltage Maximum Value of Forward Slope r T = +175C 13.51 m t J Resistance 2 2 Note 1. I t for time t = I t t x x Thermal Mechanical Specifications: Parameter Symbol Test Conditions Rating Unit Maximum Operation Junction Temperature T 65 to + 175 C J Maximum Storage Temperature T 65 to + 200 C stg Maximum Internal Thermal Resistance R DC operation 2.0 K/W thJC Junction toCase Thermal Resistance, CasetoSink R Mounting surface flat, smooth and 0.5 K/W thCS greased Mounting Torque T Nonlubricated threads 1.2 1.5 mN (10.5 13.5) (inlb) Approximate Weight wt 11 (0.25) g (oz) .250 (6.35) Max .437 (11.1) .175 (4.45) Max Max .060 (1.52) Dia Min 1032 NF2A .405 (10.3) .453 .424 (10.8) Max (11.5) Dia Max Max 1.250 (31.75) Max