X-On Electronics has gained recognition as a prominent supplier of NTE636 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. NTE636 Diodes - General Purpose, Power, Switching are a product manufactured by NTE. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

NTE636 NTE

NTE636 electronic component of NTE
NTE636 NTE
NTE636 Diodes - General Purpose, Power, Switching
NTE636  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE636
Manufacturer: NTE
Category: Diodes - General Purpose, Power, Switching
Description: RECTIFIER SILICON 600V 2A
Datasheet: NTE636 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 1.9456 ea
Line Total: USD 97.28 
Availability - 0
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 16 May to Thu. 22 May
MOQ : 50
Multiples : 1
50 : USD 1.9456
100 : USD 1.1289
200 : USD 1.0376
500 : USD 0.9684

0
Ship by Wed. 14 May to Fri. 16 May
MOQ : 1
Multiples : 1
1 : USD 2.1554
3 : USD 1.9468
10 : USD 1.7208
15 : USD 1.4079
40 : USD 1.3384

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE636 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE636 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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NTE634 thru NTE636 2 Amp Ultra Fast Recovery Controlled Avalanche Rectifiers Description: The NTE634, NTE635, and NTE636 are 2A Controlled Avalanche Rectifiers encased in a rugged glass SOD57 axial lead package, using a high temperature alloyed construction. These packages are hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Features: Glass Passivated High Maximum Operating Temperature Low Leakage Current Guaranteed Avalanche Energy Absorption Capability Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, V RRM NTE634 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE635 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE636 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Continuous Reverse Voltage, V R NTE634 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE635 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE636 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Average Forward Current (Note 1), I F(AV) (T = +85C, Lead Length = 10mm) tp NTE634 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A NTE635 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9A NTE636 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6A (T = +60C, Printed Circuit Board Mounting) A NTE634 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A NTE635 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9A NTE636 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6A Repetitive Peak Forward Current, I FRM (T = +85C) tp NTE634, NTE635 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A NTE636 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A (T = +60C) A NTE634 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A NTE635 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13A NTE636 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Non Repetitive Peak Forward Current (Note 2), I FSM NTE634, NTE635 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A NTE636 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Note 1. Averaged over any 20ms period. Note 2. t = 10ms half sine wave, T = T max prior to surge, V = V max. J J R RRMAbsolute Maximum Ratings (Contd): Non Repetitive Peak Reverse Avalanche Energy (Note 3), E . . . . . . . . . . . . . . . . . . . . . . . . 20mJ RSM Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C stg Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C J Thermal Resistance, Junction toTie Point (Lead Length 10mm), R . . . . . . . . . . . . . . 46K/W thj tp Thermal Resistance, JunctiontoAmbient (Note 4), R . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W thj a Note 3. L = 120mH, T = T max prior to surge, Inductive load switched off. J J Note 4. Device mounted on an epoxy glass printed circuit board, 1.5mm thick thickness of Cu layer 40 m. Electrical Characteristics: (T = +25C, unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Forward Voltage NTE634 V I = 2A T = T max 0.78 V F F J J 0.98 V NTE635 T = T max 0.82 V J J 1.05 V NTE636 T = T max 1.0 V J J 1.25 V Reverse Avalanche Breakdown Voltage NTE634 V I = 0.1mA 220 V (BR)R R NTE635 440 V NTE636 675 V Reverse Current I V = V 5 A R R RRMmax 150 A V = V , T = +165C R RRMmax J Reverse Recovery Time NTE634 t 25 ns When switched from I = 0.5A to rr F II = 1A, measured at I 1A measured at I = 0.25A025A R R NTE635, NTE636 50 ns Diode Capacitance NTE634 C f = 1MHz, V = 0 100 pF d R NTE635 80 pF NTE636 65 pF Maximum Slope of Reverse Recovery When switched from I = 1A to V 4 A/s dI F R R 30V and dl /dt = 1A/s dt F 1.100 (28.0) .150 (3.81) Max Max K A .030 (0.81) Max .170 (4.57) Max 1.100 (28.0) Max

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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