Product Information

NTE6412

NTE6412 electronic component of NTE

Datasheet
Diac; Ifmax:1.5A; DO35; 56÷70V

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 1.5875 ea
Line Total: USD 39.69

518 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
518 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 25
Multiples : 1
25 : USD 1.5875
250 : USD 1.25
500 : USD 1.1775
1000 : USD 1.1425
2500 : USD 1.0925
5000 : USD 1.0625
7500 : USD 1.0462
10000 : USD 1.0312

     
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Type Of Semiconductor Component
Max Load Current
Breakover Voltage
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
NTE6415 electronic component of NTE NTE6415

Thyristor SIDAC 45V 13A 2-Pin
Stock : 0

NTE6416 electronic component of NTE NTE6416

Thyristor SIDAC 45V 13A 2-Pin
Stock : 0

NTE6417 electronic component of NTE NTE6417

Thyristor SIDAC 90V 13A 2-Pin
Stock : 0

NTE6418 electronic component of NTE NTE6418

Thyristor SIDAC 90V 13A 2-Pin
Stock : 8

NTE6419 electronic component of NTE NTE6419

Thyristor SIDAC 90V 13A 2-Pin
Stock : 59

NTE646 electronic component of NTE NTE646

RECTIFIER SCHOTTKY BARRIER
Stock : 0

NTE642 electronic component of NTE NTE642

RECTIFIER SCHOTTKY BARRIER
Stock : 0

NTE643 electronic component of NTE NTE643

RECTIFIER DUAL SCHOTTKY BA
Stock : 0

NTE644 electronic component of NTE NTE644

RECTIFIER DUAL TO-220 COMM
Stock : 10

NTE645 electronic component of NTE NTE645

RECTIFIER DUAL TO-220 COMM
Stock : 10

Image Description
DB3-TP electronic component of Micro Commercial Components (MCC) DB3-TP

Micro Commercial Components (MCC) Diacs 150W, 2A32V
Stock : 0

NTE6408 electronic component of NTE NTE6408

Diac; Ifmax:2A; DO35; 28÷36V
Stock : 120

DB3-22 electronic component of CDIL DB3-22

Diac; Ifmax:2A; DO35; 28÷36V
Stock : 4300

LLDB3 electronic component of Semtech LLDB3

Diacs Trigger Diode 28 ~ 36V 50uA 2A LL-34 RoHS
Stock : 0

LLDB3 electronic component of CDIL LLDB3

Diac; Ifmax:2A; MiniMELF; 28÷36V
Stock : 5000

DB3 electronic component of Semtech DB3

Diacs Trigger Diode 28 ~ 36V 50uA 2A DO-35 RoHS
Stock : 0

DB3 electronic component of Starsea DB3

Diacs Trigger Diode DO-35 RoHS
Stock : 9980

SODDB3T RHG electronic component of Taiwan Semiconductor SODDB3T RHG

Diacs SOD-123 400mW 34V DIAC
Stock : 0

DB3T electronic component of Shikues DB3T

Diacs Trigger Diode SOD-123 RoHS
Stock : 0

NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blockingtoconduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: GlassChip Passivation DO35 Type Trigger Package Wide Voltage Range Selection Absolute Maximum Ratings: Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1 F Device Dissipation (T = 40 to +40C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW A D Derate Above +40C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C j Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278C/W thJA Thermal Resistance, JunctiontoLead (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W thJL Lead Temperature (During Soldering, 1/16 (1.59mm) from case, 10sec max), T . . . . . . . . +230C L Note 1. Based on maximum lead temperature of +85C at 250mW. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Breakover Voltage (Forward and Reverse) NTE6407 V 24 28 32 V BO NTE6408 28 32 36 V NTE6411 35 40 45 V NTE6412 56 63 70 V Breakover Voltage Symmetry NTE6407, NTE6408 V Note 2 2 V BO NTE6411 3 V NTE6412 4 V Note 2. V = +V V . BO BO BOElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Breakback Voltage NTE6407, NTE6408 V V , at 10mA, Note 3 7 V BB NTE6411 V , Note 3 10 V NTE6412 20 V Peak Breakover Current I At Breakover Voltage 25 A BO Peak Pulse Current NTE6407, NTE6408, NTE6411 I For 10 s, 120PPs, T +40C 2.0 A TRM A NTE6412 1.5 A Note 3. Typical switching time is 900ns measured at I . PK 1.100 (27.9) .210 (5.33) Max .030 (.726) .107 (2.73)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted