NTE644 & NTE645 Silicon Rectifier Fast Recovery, Dual, Common Anode TO220 Type Package Description: The NTE644 and NTE645 are dual, fast recovery, common anode silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultra- sonic systems, choppers and low RF interference. Features: Low Forward Voltage High Current Capability Fast Switching for High Efficiency High Surge Capacity Glass Passivated Chip Junction Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, V RRM NTE644 .................................................................... 400V NTE645 .................................................................... 600V Working Peak Reverse Voltage, V RWM NTE644 .................................................................... 400V NTE645 .................................................................... 600V DC Blocking Voltage, V R NTE644 .................................................................... 400V NTE645 .................................................................... 600V RMS Reverse Voltage, V R(RMS) NTE629 .................................................................... 140V NTE630 .................................................................... 420V Average Rectifier Forward Current (Rated V , T = +150 C), I R C F(AV) Per Diode .................................................................... 8A Total Device ................................................................. 16A Non Repetitive Peak Surge Current, I FSM (8.3ms Single Half Sine Wave Superimposed on Rated Load) .................... 250A Operating Junction Temperature Range (Reverse Voltage Applied), T .......... 65 to +175 C J Storage Temperature Range (Reverse Voltage Applied), T ................... 65 to +175 C stgElectrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Instantaneous Forward Voltage V I = 8A 1.3 V F F Instantaneous Reverse Current I At Rated V , T = +25 C 10 A R R C At Rated V , T = +100 C 250 A R C Junction Capacitance C Note 1 50 pF P Reverse Recovery Time NTE644 t I = 0.5A, I = 1A, i = 0.25A 150 ns rr F R rr NTE645 250 ns Note 1. Measured at 1MHz and applied reverse voltage of 4V. .147 (3.75) Dia Max .185 (4.7) .110 (2.79) .392 .054 (1.38) (9.95) .245 (6.22) A .608 (15.42) Max .040 (1.02) KKA .500 (12.7) Min .100 (52.54) .018 (0.48)