Product Information

NTE998

NTE998 electronic component of NTE

Datasheet
Voltage reference source; 1.22V; Package: bulk; 5mA; TO92

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 15.8004 ea
Line Total: USD 31.6

9 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
9 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 10
Multiples : 1

Stock Image

NTE998
NTE

10 : USD 5.275
50 : USD 4.625
250 : USD 4.0625
500 : USD 3.8375
1000 : USD 3.7375
2500 : USD 3.6375
5000 : USD 3.575
7500 : USD 3.45

     
Manufacturer
Product Category
Mounting
Case
Kind Of Package
Type Of Integrated Circuit
Reference Voltage
Operating Temperature
Output Current
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NTE998 Integrated Circuit 1.22V Reference Diode Description: The NTE998 is a temperature compensated low voltage reference device in a TO92 type package. A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this construction is low noise, low current, and good long term stability associated with modern integrated circuits. These characteristics make this device ideal for applications in battery operated equipment or where low power is necessary. Features: Low Breakdown Voltage: 1.220V typ Low Bias Current: 50 A Temperature Stability: .005 to .01%/C Absolute Maximum Ratings: Power Dissipation (free air) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70C Lead Temperature (Soldering, 10 sec.) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Electrical Characteristics: Parameter Test Conditions Min Typ Max Unit Reverse Breakdown Voltage I = 500 A 1.20 1.22 1.25 V R Reverse Breakdown Voltage Change 50 A I 5mA 15 20 mV R Reverse Dynamic Impedance I = 50 A 1 2 R I = 500 A 1 2 R Forward Voltage Drop I = 500 A 0.7 1.0 V F RMS Noise Voltage I = 500 A 0.7 1.0 V F Breakdown Voltage Temperatue Coefficient 50 A I 5mA 0.003 0.01 %/C R Reverse Current 0.05 5.0 mA.135 (3.45) Min .190 (4.8) Max .500 .018 (.045) Dia Max (12.7) Min A K .100 (2.54) .160 (4.1) Max .205 (5.2) Max .080 (2.0) Max

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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