Product Information

2N7002BKM

2N7002BKM electronic component of NXP

Datasheet
MOSFET, N CH, 60V, 0.45A, SOT883
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2148 ea
Line Total: USD 0.21

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.2148
25 : USD 0.1877
100 : USD 0.131
250 : USD 0.1021

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Packaging
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25 C- - 60V DS amb V gate-source voltage T =25 C- - 20 V GS amb 1 I drain current T =25 C -- 450 mA D amb V =10V GS 2 R drain-source on-state T =25 C -1 1.6 DSon j resistance V =10V GS I = 500 mA D 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 2 Pulse test: t 300 s 0.01. p2N7002BKM NXP Semiconductors 60 V, 450 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 2 3 D drain Transparent G top view S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002BKM SC-101 leadless ultra small plastic package 3 solder lands SOT883 body 1.0 0.6 0.5 mm 4. Marking Table 4. Marking codes Type number Marking code 2N7002BKM Z8 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25 C-60V DS amb V gate-source voltage T =25 C- 20 V GS amb 1 I drain current V =10V D GS T =25 C- 450mA amb T =100 C- 220mA amb I peak drain current T =25 C -1.2 A DM amb single pulse t 10 s p 2N7002BKM All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 25 October 2010 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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