2N7002BKV,115 Nexperia

2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25 C- - 60V DS amb V gate-source voltage T =25 C- - 20 V GS amb 1 I drain current T =25 C -- 340 mA D amb V =10V GS R drain-source on-state T =25 C -1 1.6 DSon j resistance V =10V GS I = 500 mA D 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .2N7002BKV Nexperia 60 V, 340 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1S1 source1 6 5 4 2 G1 gate 1 1 6 3D2 drain2 4S2 source2 5 G2 gate 2 2 5 12 3 6D1 drain1 3 4 017aaa055 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002BKV - plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code 2N7002BKV ZG 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25 C-60V DS amb V gate-source voltage T =25 C- 20 V GS amb 1 I drain current V =10V D GS T =25 C- 340mA amb T =100 C- 240mA amb I peak drain current T =25 C -1.2 A DM amb single pulse t 10 s p 2N7002BKV All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 22 September 2010 2 of 16