Product Information

BAS316

BAS316 electronic component of NXP

Datasheet
BAS316 SWITCH DIODE

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0685 ea
Line Total: USD 0.0685

8730 - Global Stock
Ships to you by
Mon. 01 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730 - Global Stock


Ships to you by Mon. 01 Apr

MOQ : 1
Multiples : 1

Stock Image

BAS316
NXP

1 : USD 0.0685
50 : USD 0.0343
200 : USD 0.0309
500 : USD 0.0257
1000 : USD 0.0231

     
Manufacturer
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Product
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Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
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Operating Temperature Range
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BAS16 series High-speed switching diodes Rev. 6 24 September 2014 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAS16 SOT23 - TO-236AB single small BAS16H SOD123F - - single small and flat lead BAS16J SOD323F SC-90 - single very small and flat lead BAS16L SOD882 - - single leadless ultra small BAS16T SOT416 SC-75 - single ultra small BAS16VV SOT666 - - triple isolated ultra small and flat lead BAS16VY SOT363 SC-88 - triple isolated very small BAS16W SOT323 SC-70 - single very small BAS316 SOD323 SC-76 - single very small BAS516 SOD523 SC-79 - single ultra small and flat lead 1.2 Features and benefits High switching speed: t 4ns Low capacitance rr Low leakage current Reverse voltage: V 100 V R Repetitive peak reverse voltage: Small SMD plastic packages V 100 V RRM AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switchingBAS16 series NXP Semiconductors High-speed switching diodes 1.4 Quick reference data Table 2. Quick reference data T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse voltage - - 100 V R I reverse current V =80V - - 0.5 A R R t reverse recovery I =10mA; I =10mA; -- 4 ns rr F R time R = 100 ; I =1 mA L R(meas) 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol BAS16; BAS16T; BAS16W 1 anode 3 3 2 not connected 12 3 cathode 006aaa764 12 006aaa144 BAS16H; BAS16J; BAS316; BAS516 [1] 1 cathode 2 anode 1 2 12 006aab040 001aab540 BAS16L [1] 1 cathode 2 anode 1 2 1 2 006aab040 Transparent top view BAS16VV; BAS16VY 1 anode (diode 1) 6 54 6 5 4 2 anode (diode 2) 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 1 2 3 132 6 cathode (diode 1) 001aab555 006aab106 [1] The marking bar indicates the cathode. BAS16_SER All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 6 24 September 2014 2 of 21

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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