Product Information

A2I20D020GNR1

A2I20D020GNR1 electronic component of NXP

Datasheet
RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifiers 1800-2200MHz, 2.5 W Avg., 28V

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 33.5916 ea
Line Total: USD 33.59

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 500
Multiples : 500
500 : USD 23.299
1000 : USD 23.299
2500 : USD 23.046
5000 : USD 22.839

     
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DocumentNumber:A2I20D020N NXPSemiconductors Rev. 1, 05/2017 Technical Data RFLDMOSWidebandIntegrated A2I20D020NR1 PowerAmplifiers A2I20D020GNR1 The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usablefrom 1400to 2200MHz. This multi--stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats. 14002200MHz,2.5WAVG.,28V AIRFASTRFLDMOSWIDEBAND 18002200MHz INTEGRATEDPOWERAMPLIFIERS Typical Single--Carrier W--CDMA CharacterizationPerformance: V =28Vdc, I =32mA,I =110mA,P = 2.5W Avg., DD DQ1(A+B) DQ2(A+B) out (1) Input Signal PAR = 9.9 dB 0.01%Probability onCCDF. G PAE ACPR ps Frequency (dB) (%) (dBc) TO--270WB--17 1800 MHz 31.0 19.7 44.3 PLASTIC 1900 MHz 31.0 21.7 45.0 A2I20D020NR1 2000 MHz 31.1 22.1 45.2 2100 MHz 31.4 21.1 45.2 2200 MHz 32.0 19.6 44.8 1. Alldata measured in fixture with device soldered to heatsink. TO--270WBG--17 PLASTIC Features A2I20D020GNR1 Extremely wideRF bandwidth RF decoupled drain pins reduce overall board space On--chipmatching(50ohm input, DC blocked) Integratedquiescent current temperaturecompensationwith (2) enable/disable function 2. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl for the RF Integrated Circuit Device Family.GotoV DS1A VBW A 17 (2) V 1 VBW DS1A A V 2 GS2A RF RF /V inA out1 DS2A 3 16 V GS1A RF /V out1 DS2A RF 4 inA N.C. 5 GND 6 V GS1A QuiescentCurrent 15 GND GND 7 (1) V TemperatureCompensation GS2A N.C. 8 RF 9 14 inB V GS1B RF /V out2 DS2B QuiescentCurrent V 10 GS1B (1) V 11 V TemperatureCompensation GS2B GS2B 13 (2) V 12 VBW DS1B B RF (Top View) inB RF /V out2 DS2B Note: Exposedbacksideof thepackageis V VBW DS1B B the source terminalforthe transistor. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated 2. Device can operate with V current DD CircuitFamily,andtoAN1987,QuiescentCurrentControlfortheRFIntegratedCircuit supplied through pin 13 and pin 17. DeviceFamily.Goto

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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