DocumentNumber:A2T27S007N NXPSemiconductors Rev. 0, 01/2018 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET A2T27S007NT1 This28.8dBmRF powerLDMOStransistoris designedforcellularbase stationapplications coveringthefrequency rangeof 400to2700MHz. 2100MHz 4002700MHz,28.8dBmAVG.,28V TypicalSingle--Carrier W--CDMA CharacterizationPerformance: AIRFASTRFPOWERLDMOS V =28Vdc,I =50mA,P = 28.8dBm Avg., Input SignalPAR = 9.9dB DD DQ out TRANSISTOR (1) 0.01%Probability onCCDF. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2110MHz 22.0 22.8 9.5 42.8 9 2140MHz 21.9 22.5 9.4 43.1 11 2170MHz 21.8 22.8 9.5 43.5 11 2200MHz 21.2 22.4 9.3 43.8 9 DFN4 6 1800MHz PLASTIC TypicalSingle--Carrier W--CDMA Performance: V =28Vdc, DD I =60mA,P = 28.8dBm Avg., Input SignalPAR = 9.9dB 0.01% DQ out (1) Probability onCCDF. N.C. 1 16 N.C. G OutputPAR ACPR IRL ps D N.C. 2 15 N.C. Frequency (dB) (%) (dB) (dBc) (dB) RF /V 3 14 RF /V in GS out DS 1805MHz 24.4 23.5 9.4 41.3 6 RF /V RF /V 4 13 1840MHz 24.8 24.5 8.9 41.8 10 in GS out DS 1880MHz 24.3 24.8 8.8 42.2 9 N.C. 5 12 N.C. 1. Alldatameasuredinfixturewithdevicesolderedtoheatsink. N.C. 6 11 N.C. N.C. N.C. 7 10 Features N.C. 8 9 N.C. Greater negative gate--source voltage range for improved Class C operation (TopView) Designedfor digitalpredistortionerror correctionsystems Universalbroadbanddriver Note: Exposed backside of the package is thesourceterminalforthetransistor. Optimizedfor Doherty applications Figure1.PinConnections 2018NXPB.V. A2T27S007NT1 RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 3.8 C/W JC CaseTemperature91C,28.8dBm CW,28Vdc,I =50mA,2140MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C ChargeDeviceModel(perJESD22--C101) C3 Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =10Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =7.7 Adc) DS D GateQuiescentVoltage V 1.4 1.8 2.2 Vdc GS(Q) (V =28Vdc,I =50mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =77mAdc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat