Product Information

BAP70AM,115

BAP70AM,115 electronic component of NXP

Datasheet
NXP Semiconductors PIN Diodes QUAD AM PIN DIODE
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.89
10 : USD 0.9156
100 : USD 0.5106
500 : USD 0.4039
1000 : USD 0.3677
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Carrier Life
Maximum Series Resistance Minimum If
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BAP70AM Silicon PIN diode array Rev. 4 7 March 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits High voltage current controlled RF resistor for RF attenuators Low diode capacitance Very low series inductance Low distortion 1.3 Applications RF attenuators (SAT) TV applications Car radio applications 2. Pinning information Table 1. Discrete pinning Pin Description Simplified outline Graphic symbol 1 anode diode 1 2 cathode diode 2 3 anode diode 3 / cathode diode 4 4 anode diode 4 5 cathode diode 3 P 6 anode diode 2 / cathode diode 1 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BAP70AM - plastic surface-mounted package 6 leads SOT363 V BAP70AM NXP Semiconductors Silicon PIN diode array 4. Marking Table 3. Marking Type number Marking code Description BAP70AM N9* * = - : made in Hong Kong * = p : made in Hong Kong * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 50 V R I forward current - 100 mA F P total power dissipation T =90 C- 300 mW tot sp T storage temperature 65 +150 C stg T junction temperature 65 +150 C j 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction 260 K/W th(j-sp) to solder point BAP70AM All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 4 7 March 2014 2 of 8

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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