LM200802-M-A-300 PIN Diode Limiter Rev. V1 20 MHz - 8 GHz Features Surface Mount Limiter in 8 mm x 5 mm x 2.5 mm Package Incorporates NIP & PIN Limiter Diodes DC Blocks & DC Return Higher Average Power Handling than Plastic: 44 dBm Average Power Lower Insertion Loss: 1.4 dB Lower Flat Leakage Power: 20 dB Pin Out RoHS* Compliant Description The LM200802-M-A-300 surface mount PIN diode limiter module is a passive two-stage power limiter that operates from 20 MHz - 8 GHz. It is manufactured using a proven hybrid manufacturing process incorporating silicon NIP and PIN diodes integrated onto a ceramic substrate. This low profile, compact (8 mm L x 5 mm W x 2.5 mm H), surface mount component offers superior small and large signal performance. This product is designed to minimize small signal insertion loss for very low receiver noise figure and high isolation for low flat leakage power for effective receiver protection. The Limiter Schematic design incorporates a silicon NIP coarse limiter diode and a silicon PIN clean-up stage diode to provide broad band microwave performance. The NIP and PIN diode configuration eliminates the need to include an RF choke to complete the DC bias return path. The very low thermal resistance (NIP diode: <20 C/W, PIN diode: <90 C/W, junction to the bottom surface of the package) enables the limiter to safely and reliably handle RF CW incident power levels of 44 dBm and RF peak incident power levels of 50 dBm (1 s RF pulse width, 0.1% duty cycle). The low PIN and NIP diodes series Ordering Information resistances (<1.5 ) provide low flat leakage power (<20 dBm) and the thin I layer of the output stage Part Number Package provides low spike leakage energy (<0.1 Ergs) for LM200802-M-A-300-T tube packaging superior LNA protection. No external control signals are required. LM200802-M-A-300-R 250 or 500 piece reel This PIN diode limiter module is ideally suited for LM200802-M-A-300-W waffle packaging receiver protection applications. LM200802-M-A-300-E RF evaluation board * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: LM200802-M-A-300 PIN Diode Limiter Rev. V1 20 MHz - 8 GHz Electrical Specifications: Freq. = 20 MHz - 8 GHz, P = 0 dBm, T = +25C, Z = 50 IN A 0 Parameter Test Conditions Units Min. Typ. Max. Insertion Loss dB 1.4 1.6 Return Loss dB 13 15 P1dB dBm 6 8 10 2nd Harmonic Output Frequency = 2 GHz dBc -50 -40 Peak Incident Power RF Pulse Width = 1 s, 1% Duty dBm 50 51 CW Incident Power dBm 43 44 Flat Leakage Power RF Pulse Width = 1 s, 0.1% Duty dBm 20 23 Spike Leakage Power P = 50 dBm peak, RF Pulse Width = 1 s, 0.1% Duty Ergs 0.2 0.3 IN 50% falling edge of RF Pulse to 1 dB IL, P = 50 dBm IN Recovery Time ns 500 800 peak, RF Pulse Width = 1 s, 0.1% Duty 1,2 Absolute Maximum Ratings Parameter Absolute Maximum RF CW Incident Power +85C, Source & Load VSWR <1.2:1 42 dBm 3 Derate linearly t 0 W T = +150C C RF Peak Incident Power +85C, Source & Load VSWR <1.2:1 50 dBm 3 Derate linearly t 0 W T = +150C C Thermal Resistance 25C/W Junction to bottom surface of package Junction Temperature +175C Operating / Storage Temperature -65C to +150C Assembly Temperature 260C for 30 seconds 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. MACOM does not recommend sustained operation near these survivability limits. 3. T is defined as the temperature of the bottom surface of the package. C 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: