BAS101 NXP

BAS101 BAS101S High-voltage switching diodes Rev. 02 14 December 2009 Product data sheet 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Configuration NXP JEITA BAS101 SOT23 - single BAS101S SOT23 - dual series 1.2 Features High switching speed: t 50 ns Low capacitance: C 2pF rr d Low leakage current Reverse voltage: V 300 V R Repetitive peak reverse voltage: Small SMD plastic package V 300 V RRM 1.3 Applications High-speed switching Voltage clamping High-voltage switching Reverse polarity protection 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I forward current - - 200 mA F I reverse current V = 250 V - - 150 nA R R V reverse voltage - - 300 V R 1 t reverse recovery time --50 ns rr 1 When switched from I = 30 mA to I =30mA R = 100 measured at I =3mA. F R L RNXP Semiconductors BAS101 BAS101S High-voltage switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol BAS101 1 anode 3 3 2 not connected 12 3 cathode 006aaa764 12 BAS101S 1 anode (diode 1) 3 3 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) 12 12 006aaa763 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAS101 - plastic surface-mounted package 3 leads SOT23 BAS101S 4. Marking Table 5. Marking codes 1 Type number Marking code BAS101 *HQ BAS101S *HR 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BAS101 BAS101S 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 14 December 2009 2 of 11