Product Information

BAT18

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Datasheet

DIODE, BAND, SWITCHING

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.2729 ea
Line Total: USD 1.36

0 - Global Stock

MOQ: 5 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 5 Multiples : 1 BAT18 NXP	5 : USD 0.2729 25 : USD 0.2593 100 : USD 0.2064 250 : USD 0.1837

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Additional Infomation About Product

BAT18 Silicon planar diode Rev. 02 31 August 2004 Product data sheet 1. Product prole 1.1 General description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.0 pF Low diode forward resistance: max. 0.7 . 1.3 Applications Band switching. 2. Pinning information Table 1: Pinning Pin Description Simplied outline Symbol 1 anode 3 2 not connected 3 3 cathode 1 2 sym044 12 3. Ordering information Table 2: Ordering information Type number Package Name Description Version BAT18 - plastic surface mounted package 3 leads SOT23BAT18 Philips Semiconductors Silicon planar diode 4. Marking Table 3: Marking 1 Type number Marking code BAT18 10* 1 * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V continuous reverse voltage - 35 V R I continuous forward current - 100 mA F T storage temperature - 55 +125 C stg T junction temperature - 125 C j 6. Thermal characteristics Table 5: Thermal characteristics T = 25 C unless otherwise specied. j Symbol Parameter Conditions Typ Unit R thermal resistance from junction to tie-point 330 K/W th(j-tp) 1 R thermal resistance from junction to ambient 500 K/W th(j-a) 1 Device mounted on a FR4 printed-circuit board. 7. Characteristics Table 6: Electrical characteristics Symbol Parameter Conditions Min Typ Max Unit V forward voltage I = 100 mA see Figure 1 - - 1.2 V F F I reverse current see Figure 2 R V = 20 V - - 100 nA R V = 20 V T =60 C --1 A R j C diode capacitance V = 20 V f = 1 MHz see Figure 3 - 0.8 1.0 pF d R r diode forward I = 5 mA f = 200 MHz see Figure 4 - 0.5 0.7 D F resistance 9397 750 13385 Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 31 August 2004 2 of 7

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Manufacturer NXP NXP
Product Category Unclassified Unclassified
Diode Configuration Single Single
Repetitive Reverse Voltage Vrrm Max 35 V 35 V
Forward Current Ifav 100 mA 100 mA
Forward Voltage Vf Max 1.2 V 1.2 V
Reverse Recovery Time Trr Max - -
Forward Surge Current Ifsm Max - -
Operating Temperature Max 125 C 125 C
Diode Case Style Sot - 23 Sot - 23
No Of Pins 3 3
Packaging Cut Tape Cut Tape
Svhc No Svhc (15 - Jun - 2015) No Svhc (15 - Jun - 2015)
Capacitance Vr1 1 pF 1 pF
Capacitance Cd Vr Max 1 pF 1 pF
Capacitance Cd Vr Typ 0.8 pF 0.8 pF
Capacitance Ct 1 pF 1 pF
Current Ir Max 100 nA 100 nA
Device Marking 10* 10*
Diode Type Variable Capacitance Variable Capacitance
External Depth 1.1 mm 1.1 mm
External Length / Height 1.4 mm 1.4 mm
External Width 3 mm 3 mm
Msl Msl 1 - Unlimited Msl 1 - Unlimited
Operating Temperature Min - 55 C - 55 C
Operating Temperature Range - 55 C To + 125 C - 55 C To + 125 C
Peak Forward Current 100 mA 100 mA
Pin Configuration 1A,2Nc,3K 1A,2Nc,3K
Resistance Rd Max 0.7 Ohms 0.7 Ohms
Reverse Voltage Vr Max 35 V 35 V
Reverse Voltage Vr1 35 V 35 V
Termination Type Smd Smd
Vr Cd Measurement Voltage Max 20 V 20 V
Vr Ir Measurement Voltage 20 V 20 V