Product Information

BAT18,235

BAT18,235 electronic component of NXP

Datasheet
NXP Semiconductors PIN Diodes 35V 100mA Single
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.8694
10 : USD 0.6426
100 : USD 0.1566
1000 : USD 0.1253
2500 : USD 0.1145
10000 : USD 0.1113
20000 : USD 0.1113
50000 : USD 0.1069
100000 : USD 0.1037
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
If - Forward Current
Vf - Forward Voltage
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Ir - Reverse Current
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BAT18 Silicon planar diode Rev. 02 31 August 2004 Product data sheet 1. Product prole 1.1 General description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.0 pF Low diode forward resistance: max. 0.7 . 1.3 Applications Band switching. 2. Pinning information Table 1: Pinning Pin Description Simplied outline Symbol 1 anode 3 2 not connected 3 3 cathode 1 2 sym044 12 3. Ordering information Table 2: Ordering information Type number Package Name Description Version BAT18 - plastic surface mounted package 3 leads SOT23BAT18 Philips Semiconductors Silicon planar diode 4. Marking Table 3: Marking 1 Type number Marking code BAT18 10* 1 * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V continuous reverse voltage - 35 V R I continuous forward current - 100 mA F T storage temperature - 55 +125 C stg T junction temperature - 125 C j 6. Thermal characteristics Table 5: Thermal characteristics T = 25 C unless otherwise specied. j Symbol Parameter Conditions Typ Unit R thermal resistance from junction to tie-point 330 K/W th(j-tp) 1 R thermal resistance from junction to ambient 500 K/W th(j-a) 1 Device mounted on a FR4 printed-circuit board. 7. Characteristics Table 6: Electrical characteristics Symbol Parameter Conditions Min Typ Max Unit V forward voltage I = 100 mA see Figure 1 - - 1.2 V F F I reverse current see Figure 2 R V = 20 V - - 100 nA R V = 20 V T =60 C --1 A R j C diode capacitance V = 20 V f = 1 MHz see Figure 3 - 0.8 1.0 pF d R r diode forward I = 5 mA f = 200 MHz see Figure 4 - 0.5 0.7 D F resistance 9397 750 13385 Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 31 August 2004 2 of 7

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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