Product Information

BAV99/8

BAV99/8 electronic component of NXP

Datasheet
DIODE, DUAL, 215MA, 100V, SOT-23

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2904 ea
Line Total: USD 0.29

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 0.2904
10 : USD 0.1959
100 : USD 0.0819
1000 : USD 0.0554
3000 : USD 0.0435
9000 : USD 0.0378

     
Manufacturer
Product Category
Packaging
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No Of Pins
Svhc
Diode Type
Msl
Operating Temperature Min
Operating Temperature Range
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BAV99/8 High-speed switching diode Rev. 01 30 March 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diode in dual series configuration, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High switching speed: t 4ns Low capacitance: C 1.5 pF rr d Low leakage current Reverse voltage: V 100 V R Small SMD plastic package AEC-Q101 qualified 1.3 Applications High-speed switching Reverse polarity protection General-purpose switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I reverse current V =80V - - 0.5 A R R V reverse voltage - - 100 V R 1 t reverse recovery time -- 4 ns rr 1 When switched from I =10mA to I =10 mA R = 100 measured at I =1 mA. F R L R 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 anode (diode 1) 3 3 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) 12 12 006aaa763 BAV99/8 NXP Semiconductors High-speed switching diode 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAV99/8 - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code BAV99/8 MF* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V repetitive peak reverse -100 V RRM voltage V reverse voltage - 100 V R 1 I forward current -215 mA F 2 -125 mA I repetitive peak forward -500 mA FRM current 3 I non-repetitive peak square wave FSM forward current t =1 s- 4 A p t =1ms - 1 A p t =1s - 0.5 A p 1 4 P total power dissipation T 25 C -250 mW tot amb Per device T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Single diode loaded. 2 Double diode loaded. 3 T =25 C prior to surge. j 4 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAV99 8 1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 30 March 2010 2 of 11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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