Product Information

BB170X

BB170X electronic component of NXP

Datasheet
Varactor Diodes VHF variable capacitance diode

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5533 ea
Line Total: USD 0.55

71665 - Global Stock
Ships to you between
Wed. 08 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
39956 - Global Stock


Ships to you between Wed. 08 May to Fri. 10 May

MOQ : 1
Multiples : 1

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BB170X
NXP

1 : USD 0.3887
10 : USD 0.3358
100 : USD 0.2357
500 : USD 0.1898
1000 : USD 0.1598
3000 : USD 0.1449
9000 : USD 0.138
24000 : USD 0.1346
45000 : USD 0.1311

     
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RoHS - XON
Icon ROHS
Capacitance
Vr - Reverse Voltage
If - Forward Current
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Minimum Operating Temperature
Maximum Operating Temperature
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Cnhts
Hts Code
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Mxhts
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BB170 VHF variable capacitance diode Rev. 1 25 March 2013 Product data sheet 1. Product profile 1.1 General description The BB170 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 (SC-76) very small SMD plastic package. 1.2 Features and benefits Excellent linearity Very small SMD plastic package C = 2.6 pF C to C ratio = 15 d(28V) d(1V) d(28V) Low series resistance 1.3 Applications Voltage Controlled Oscillators (VCO) 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1 1 cathode 1 2 2 anode sym008 1 The marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BB170 SC-76 plastic surface-mounted package 2 leads SOD323BB170 NXP Semiconductors VHF variable capacitance diode 4. Marking Table 3. Marking Type number Marking code BB170 4H 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 30 V R I forward current - 20 mA F T storage temperature 55 +150 C stg T junction temperature 55 +125 C j 6. Characteristics Table 5. Characteristics T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit 1 I reverse current V =30V -- 10 nA R R 1 V =30V T =85 C -- 200nA R j r diode series resistance f = 100 MHz C =12pF - - 0.9 s d 2 C diode capacitance f = 1 MHz d V = 1 V 36.8 - 41.8 pF R V = 28 V 2.4 2.6 2.75 pF R C /C diode capacitance ratio f = 1 MHz 14.5 15 - d(1V) d(28V) (1Vto28V) 1 See Figure 2. 2 See Figure 1 and Figure 3. BB170 All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 25 March 2013 2 of 8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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