Product Information

BB199,115

BB199,115 electronic component of NXP

Datasheet
Diode VAR Cap Single 20V 36.5pF 2-Pin SOD-523 T/R

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

92: USD 0.28 ea
Line Total: USD 25.76

0 - Global Stock
MOQ: 92  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Capacitance
Vr - Reverse Voltage
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Configuration
Packaging
Brand
Package Type
Pin Count
Type
Operating Temperature Classification
Tuning Ratio
Tuning Ratio Test Condition
Rad Hardened
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BB199 Variable capacitance diode for VCO and VCXO Rev. 1 1 December 2010 Product data sheet 1. Product profile 1.1 General description The BB199 is a low voltage variable capacitance diode for the Voltage Controlled Oscillator (VCO) and Voltage Controlled Crystal Oscillator (VCXO) applications. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Small plastic SMD package Very low operating voltage (1 V to 4 V) Large capacitance ratio (C /C = 2.8 minimum) d(0V5) d(2V) Good capacitor-voltage (C-V) linearity Very low series resistance allowing high Q performance. 1.3 Applications Communication equipment Voltage Controlled Oscillators 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol 1 1 cathode 2 anode 1 2 sym008 1 The marking bar indicates the cathode.BB199 NXP Semiconductors Variable capacitance diode for VCO and VCXO 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BB199 SC-79 plastic surface-mounted package 2 leads SOD523 4. Marking Table 3. Marking codes Type number Marking code BB199 K9 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 20 V R I forward current - 100 mA F P total power dissipation T = 90 C- 300mW tot sp T storage temperature 65 +150 C stg T junction temperature 65 +150 C j 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to solder point 200 K/W th(j-sp) 7. Characteristics Table 6. Characteristics T =25 C unless otherwise specified j Symbol Parameter Conditions Min Typ Max Unit I reverse current V = 20 V - - 1000 nA R R V =16V - - 5 nA R C diode capacitance f = 1 MHz d V = 0.5 V 36.5 - 42.5 pF R V = 2 V 11.8 - 13.8 pF R r diode series resistance V = 1.5 V f = 100 MHz - 0.25 0.5 s R C /C diode capacitance ratio (0.5 V to 2 V) f = 1 MHz 2.8 - - d(0V5) d(2V) BB199 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 1 December 2010 2 of 8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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