Product Information

BB207,215

BB207,215 electronic component of NXP

Datasheet
Varactor Diodes TAPE7 DIO-RFSS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6313 ea
Line Total: USD 0.63

2895 - Global Stock
Ships to you between
Wed. 08 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2895 - Global Stock


Ships to you between Wed. 08 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 0.6313
10 : USD 0.5543
100 : USD 0.3933
500 : USD 0.3381
1000 : USD 0.2955
3000 : USD 0.2679
6000 : USD 0.2611
9000 : USD 0.2519
24000 : USD 0.2495

     
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RoHS - XON
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Capacitance
Vr - Reverse Voltage
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BB207 FM variable capacitance double diode Rev. 3 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BB207 is a variable capacitance double diode with a common cathode, fabricated in silicon planar technology, and encapsulated in the SOT23 small plastic SMD package. 1.2 Features and benefits Excellent linearity C : 81 pF C : 27.6 pF d(1V) d(7.5V) C to C ratio: min. 2.6 d(1V) d(7.5V) Very low series resistance Small plastic SMD package. 1.3 Applications Electronic tuning in FM-radio. 2. Pinning information Table 1. Discrete pinning Pin Description Simplified outline Symbol 1 anode 1 3 3 2 anode 2 3 common cathode 1 2 12 sym032 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BB207 - plastic surface mounted package 3 leads SOT23 SOT23BB207 NXP Semiconductors FM variable capacitance double diode 4. Marking Table 3. Marking 1 Type number Marking code BB207 *13 1 * = p: made in Hong Kong. * = w: made in China. 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V continuous reverse voltage - 15 V R I continuous forward current - 20 mA F T storage temperature 55 +150 C stg T junction temperature 55 +125 C j 6. Characteristics Table 5. Electrical Characteristics T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit Per diode I reverse current V =15V see Figure 2 10 nA R R V =15V T =85 C see Figure 2 200 nA R j r diode series resistance f = 100 MHz V =3 V 0.2 0.4 s R C diode capacitance V = 1 V f = 1 MHz see Figure 1 76 81 86 pF d R V = 3 V f = 1 MHz see Figure 1 50.5 pF R V = 7.5 V f = 1 MHz see Figure 1 25.5 27.6 29.7 pF R V = 8 V f = 1 MHz see Figure 1 26.3 pF R capacitance ratio f = 1 MHz 2.6 3.3 C d1V ------------------- C d7.5V BB207 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 7 September 2011 2 of 8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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