Product Information

BGS8H2X

BGS8H2X electronic component of NXP

Datasheet
RF Amplifier MMIC
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5347 ea
Line Total: USD 0.53

4316 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4316 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.5347
10 : USD 0.4508
100 : USD 0.3415
500 : USD 0.2725
1000 : USD 0.2185
5000 : USD 0.1622
10000 : USD 0.1598
25000 : USD 0.1552

Read More Specifications

     
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RoHS - XON
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Cnhts
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Mxhts
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Additional Infomation About Product

BGS8H2 SiGe:C low-noise amplifier MMIC with bypass switch for LTE Rev. 4 20 August 2018 Product data sheet 1 General description The BGS8H2 is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8H2 requires one external matching inductor. The BGS8H2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8H2 can be switched off to operate in bypass mode at a 1 A current, to lower power consumption. The BGS8H2 is optimized for 2300 MHz to 2690 MHz. 2 Features and benefits Operating frequency from 2300 MHz to 2690 MHz Noise figure = 1.0 dB Gain 12.5 dB Bypass switch insertion loss of 2.3 dB High input 1 dB compression point of -1.5 dBm High in band IP3 of 4.0 dBm i Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 5.8 mA Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design. Requires only one input matching inductor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm 0.4 mm pitch: SOT1232 180 GHz transit frequency - SiGe:C technology Moisture sensitivity level 1 XSON6NXP Semiconductors BGS8H2 SiGe:C low-noise amplifier MMIC with bypass switch for LTE 3 Applications LNA for LTE reception in smart phones Feature phones Tablet PCs RF front-end modules BGS8H2 All information provided in this document is subject to legal disclaimers. NXP B.V. 2018. All rights reserved. Product data sheet Rev. 4 20 August 2018 2 / 15

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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