BGU6102,147 NXP

BGU6102 Wideband silicon low-noise amplifier MMIC Rev. 3 13 July 2012 Product data sheet 1. Product profile 1.1 General description The BGU6102 MMIC is an unmatched wideband MMIC featuring an integrated bias, enable function and wide supply voltage. BGU6102 is part of a family of three products (BGU6101, BGU6102 and BGU6104) and is optimized for 2 mA operation. 1.2 Features and benefits Supply voltage range from 1.5 V to 5 V Current range up to 20 mA at 3 V and 40 mA at 5 V supply voltage NF of 0.7 dB min Applicable between 40 MHz and 4 GHz Integrated temperature-stabilized bias for easy design Bias current configurable with external resistor Power-down mode current consumption < 6 A ESD protection on all pins up to 3 kV HBM Small 6-pin leadless package 2.0 mm 1.3 mm 0.35 mm 1.3 Applications FM radio RKE, TPMS Mobile TV, CMMB AMR, ZigBee, Bluetooth ISM WiFi, WLAN (2.4 GHz) Wireless security Low current applications 1.4 Quick reference data Table 1. Quick reference data T =25 C V = 3.0 V I = 3.0 mA V 1.2 V unless otherwise specified. All amb CC CC(tot) ENABLE measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit 2 s insertion power gain f = 450 MHz - 18.5 - dB 21 f = 900 MHz - 16.5 - dB f = 2400 MHz I = 6 mA - 14.0 - dB CC(tot) NF minimum noise figure f = 450 MHz - 0.7 - dB min f = 900 MHz - 0.8 - dB f = 2400 MHz I =6mA - 1.2 - dB CC(tot)BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 1. Quick reference data continued T =25 C V = 3.0 V I = 3.0 mA V 1.2 V unless otherwise specified. All amb CC CC(tot) ENABLE measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit P output power at 1 dB gain f = 450 MHz - 5.0 - dBm L(1dB) compression f = 900 MHz - 5.5 - dBm f = 2400 MHz I =6mA - 0 - dBm CC(tot) IP3 output third-order f = 450 MHz - 5.5 - dBm O intercept point f = 900 MHz - 6.0 - dBm f = 2400 MHz I =6mA - 11.5 - dBm CC(tot) 2. Pinning information 2.1 Pinning 1 6 2 5 3 4 Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description V 1 supply voltage CC n.c. 2 not connected RF IN 3 RF in RF OUT 4 RF out ENABLE 5 enable CUR ADJ 6 current adjust GND GND ground pad RF and DC ground 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGU6102 HXSON6 plastic thermal enhanced super thin small outline SOT1209 package no leads 6 terminals body 2 x 1.3 x 0.35 mm OM7809 - 50 LNA evaluation board - OM7810 - high-ohmic LNA evaluation board - BGU6102 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 13 July 2012 2 of 20