BGY588C,112 NXP

BGY588C 550 MHz, 34.5 dB gain push-pull amplifier Rev. 2 19 September 2011 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module operating at a supply voltage of 24 V (DC) in a SOT115J package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability 1.3 Applications CATV systems in the 40 MHz to 550 MHz frequency range and intended for use as a line extender. 1.4 Quick reference data Table 1. Quick reference data Bandwidth 40 MHz to 550 MHz V =24V T =35 C Z =Z =75 unless otherwise specified. B mb S L Symbol Parameter Conditions Min Typ Max Unit power gain f = 50 MHz 33.5 - 35.5 dB G p f=550MHz 33.7--dB 1 total current consumption V =24V 305 - 345 mA I tot B 1 The module normally operates at V = 24 V, but is able to withstand supply transients up to 30 V. B 1 23 5 78 9BGY588C NXP Semiconductors 550 MHz, 34.5 dB gain push-pull amplifier 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 input 2 common 5 3 common 1 9 13 57 9 5+V B 7 common 23 78 sym095 8 common 9output 3. Ordering information Table 3. Ordering information Type Package number Name Description Version BGY588C - rectangular single-ended package aluminium flange SOT115J 2 vertical mounting holes 2 6-32 UNC and 2 extra horizontal mounting holes 7 gold-plated in-line leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V RF input voltage - 55 dBmV i T storage temperature 40 +100 C stg T mounting base temperature 20 +100 C mb BGY588C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 19 September 2011 2 of 8