BSR58,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BSR56 BSR57 BSR58 N-channel FETs April 1991 Product specication File under Discrete Semiconductors, SC07Philips Semiconductors Product specication N-channel FETs BSR56 BSR57 BSR58 DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for 3 handbook, halfpage low-power, chopper or switching d applications in industrial service. g s PINNING 12 1 = drain Top view MAM385 2 = source 3 = gate Note 1. Drain and source are Fig.1 Simplified outline and symbol, SOT23. interchangeable. Marking code BSR56 = M4P BSR57 = M5P BSR58 = M6P QUICK REFERENCE DATA BSR56 BSR57 BSR58 Drain-source voltage V max. 40 40 40 V DS Total power dissipation up to T = 40 CP max. 250 250 250 mW amb tot Drain current V = 15 V V =0 > 50 20 8 mA DS GS I DSS <- 100 80 mA Gate-source cut-off voltage V = 15 V I = 0.5 nA > 4 2 0.8 V DS D - V (P)GS < 10 6 4 V Drain-source resistance (on) at f = 1 kHz I = 0 V =0 r < 25 40 60 D GS ds on Feedback capacitance at f = 1 MHz - V = 10 V V =0 C < 55 5pF GS DS rs Turn-off time V = 10 V V =0 DD GS I = 20 mA - V = 10 V t < 25 -- ns D GSM off I = 10 mA - V =6 V t <- 50 - ns D GSM off I = 5 mA - V =4 V t <- - 100 ns D GSM off April 1991 2