TGF2021-04-SD DC-4 GHz Packaged Power pHEMT Key Features Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance: OTOI: 39.5 dBm Noise Figure: 0.6dB Gain: 16dB P1dB: 26.5dBm Input Return Loss: -8 dB Output Return Loss: -18 dB Bias: Vd = 5 V, Id = 150 mA, Vg = -0.8 V 900 MHz Low Noise Application (Typical) Board Performance Bias conditions: Vd = 5 V, Idq = 150 mA, Vg = -0.8 V Typical Primary Applications Cellular Base Stations WiMAX Wireless Infrastructure Low Noise Amplifiers Product Description The TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost SOT89 surface mount package. The devices ideal operating point for low noise operation is at a drain bias of 5 V and 150 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 16 dB gain, 0.6dB noise figure, and 39.5 dBm output IP3. The combination of high gain, low noise, and excellent linearity makes this an ideal component for use in a 3G or 4G receive chain. Evaluation boards at 900 MHz are available. RoHS and Lead-Free compliant 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2012 Rev CTGF2021-04-SD Table I Absolute Maximum Ratings 1/ Symbol Parameter Value Notes Vd-Vg Drain to Gate Voltage 15.0 V Vd Drain Voltage 12.0 V 2/ Vg Gate Voltage Range -5 to 0 V Id Drain Current 1800 mA 2/ Ig Gate Current Range 28 mA Tch Channel Temperature 200 C 1/ Pin Input Continuous Wave Power 31 dBm 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Low Noise Operating Conditions Symbol Parameter 1/ Typical Value Vd Drain Voltage 5 V Idq Drain Current 150 mA Vg Gate Voltage -0.8 V 1/ See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2012 Rev C