Product Information

BT148W-600R

BT148W-600R electronic component of NXP

Datasheet
THYRISTOR, 1A, 600V, SOT-223
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3715 ea
Line Total: USD 0.37

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 100
Multiples : 1
100 : USD 0.3662
500 : USD 0.301
1000 : USD 0.2408
5000 : USD 0.2158

Read More Specifications

     
Manufacturer
Product Category
Packaging
Peak Repetitive Off-State Voltage Vdrm
Gate Trigger Current Max Igt
Current It Av
On State Rms Current Itrms
Thyristor Case Style
No Of Pins
Peak Non Rep Surge Current Itsm 50Hz
Holding Current Max Ih
Gate Trigger Voltage Max Vgt
Operating Temperature Max
Msl
Svhc
Current Itsm
Operating Temperature Min
Operating Temperature Range
Repetitive Reverse Voltage Vrrm Max
Termination Type
Thyristor Type
LoadingGif

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Additional Infomation About Product

BT148W-600R SCR 2 December 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 (SC-73) surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Surface mountable package 3. Applications Adapters Battery powered applications Industrial automation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- 1 - - 600 V DRM state voltage V repetitive peak reverse - - 600 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 10 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p I average on-state half sine wave T 112 C Fig. 1 - - 0.6 A T(AV) sp current I RMS on-state current half sine wave T 112 C Fig. 2 - - 1 A T(RMS) sp Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 9 - 50 200 A GT D T j 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. Scan or click this QR code to view the latest information for this product SOT223NXP Semiconductors BT148W-600R SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 4 A K G 2 A anode sym037 3 G gate 1 2 3 4 mb mb connected to anode SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT148W-600R SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code BT148W-600R BT148W 60 BT148W-600R All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 2 December 2014 2 / 15

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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