Product Information

BT151-1000RT,127

BT151-1000RT,127 electronic component of NXP

Datasheet
NXP Semiconductors SCRs Thyristor SCR 1KV 13 1A 3-Pin (3Tab)

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2298 ea
Line Total: USD 1.23

4831 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4719 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 0.9039
10 : USD 0.7532
100 : USD 0.5347
500 : USD 0.475
1000 : USD 0.4152
2000 : USD 0.3749
5000 : USD 0.3588
10000 : USD 0.3369
25000 : USD 0.3369

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Vf - Forward Voltage
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
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BT151-1000RT SCR 22 February 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance. 2. Features and benefits High junction operating temperature capability High thermal cycling performance Planar passivated for voltage ruggedness and reliability Very high bidirectional blocking voltage capability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 1000 V DRM state voltage V repetitive peak reverse - - 1000 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 120 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 132 A j(init) t = 8.3 ms p T junction temperature - - 150 C j I average on-state half sine wave T 134 C - - 7.5 A T(AV) mb current I RMS on-state current half sine wave T 134 C Fig. 1 - - 12 A T(RMS) mb Fig. 2 Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 2 15 mA GT D T j Dynamic characteristicsWeEn Semiconductors BT151-1000RT SCR Symbol Parameter Conditions Min Typ Max Unit dV /dt rate of rise of off-state V = 670 V T = 150 C (V = 67% - 300 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151-1000RT TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BT151-1000RT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 22 February 2018 2 / 12

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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