Product Information

BTA212-600B/B

BTA212-600B/B electronic component of NXP

Datasheet
BTA212-600B/B 12 AMP HICOM TRIAC T/HOLE

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6098 ea
Line Total: USD 0.61

0 - Global Stock
Ships to you by
Mon. 22 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you by Mon. 22 Apr

MOQ : 1
Multiples : 1
1 : USD 0.6098
25 : USD 0.3049
50 : USD 0.2744
75 : USD 0.2287
100 : USD 0.2058

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
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DISCRETE SEMICONDUCTORS DDATA SHEET BTA212 series B Three quadrant triacs high commutation September 1997 Product specification  Semiconductors Product specification Three quadrant triacs BTA212 series B high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope intended foruse incircuits wherehigh staticand BTA212- 500B 600B 800B dynamic dV/dt and high dI/dt can V Repetitive peak off-state 500 600 800 V DRM occur. These devices will commutate voltages the full rated rms current at the I RMS on-state current 12 12 12 A T(RMS) maximum rated junction temperature, I Non-repetitive peak on-state 95 95 95 A TSM without the aid of a snubber. current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab 1 main terminal 1 T2 T1 2 main terminal 2 3 gate G 123 tab main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 1 1 V Repetitive peak off-state - 500 600 800 V DRM voltages I RMS on-state current full sine wave; - 12 A T(RMS) T 99 C mb I Non-repetitive peak full sine wave; TSM on-state current T = 25 C prior to j surge t = 20 ms - 95 A t = 16.7 ms - 105 A 2 2 2 ItI t for fusing t = 10 ms - 45 A s dI /dt Repetitive rate of rise of I = 20 A; I = 0.2 A; 100 A/s T TM G on-state current after dI /dt = 0.2 A/s G triggering I Peak gate current - 2 A GM V Peak gate voltage - 5 V GM P Peak gate power - 5 W GM P Average gate power over any 20 ms - 0.5 W G(AV) period T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 1997 1 Rev 1.200

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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