Product Information

BTA212B-600B,118

BTA212B-600B,118 electronic component of NXP

Datasheet
Triacs TAPE13 3Q TRIAC
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7547 ea
Line Total: USD 0.75

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.7547
100 : USD 0.7254
250 : USD 0.6961

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DDATA SHEET BTA212B series B Three quadrant triacs high commutation September 1997 Product specification Semiconductors Product specification Three quadrant triacs BTA212B series B high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope suitable for surface mounting intended for use in BTA212B- 500B 600B 800B circuits where high static and dynamic V Repetitive peak off-state 500 600 800 V DRM dV/dt and high dI/dt can occur. These voltages devices will commutate the full rated I RMS on-state current 12 12 12 A T(RMS) rms current at the maximum rated I Non-repetitive peak on-state 95 95 95 A TSM junction temperature, without the aid current of a snubber. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION mb 1 main terminal 1 T2 T1 2 main terminal 2 3 gate 2 mb main terminal 2 13 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 1 1 V Repetitive peak off-state - 500 600 800 V DRM voltages I RMS on-state current full sine wave - 12 A T(RMS) T 99 C mb I Non-repetitive peak full sine wave TSM on-state current T = 25 C prior to j surge t = 20 ms - 95 A t = 16.7 ms - 105 A 2 2 2 ItI t for fusing t = 10 ms - 45 A s dI /dt Repetitive rate of rise of I = 20 A I = 0.2 A 100 A/s T TM G on-state current after dI /dt = 0.2 A/s G triggering I Peak gate current - 2 A GM V Peak gate voltage - 5 V GM P Peak gate power - 5 W GM P Average gate power over any 20 ms - 0.5 W G(AV) period T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 1997 1 Rev 1.200

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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