X-On Electronics has gained recognition as a prominent supplier of BUK7575-55A,127 MOSFET across the USA, India, Europe, Australia, and various other global locations. BUK7575-55A,127 MOSFET are a product manufactured by NXP. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BUK7575-55A,127 NXP

BUK7575-55A,127 electronic component of NXP
Images are for reference only
See Product Specifications
Part No.BUK7575-55A,127
Manufacturer: NXP
Category: MOSFET
Description: NXP Semiconductors MOSFET RAIL PWR-MOS
Datasheet: BUK7575-55A,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.8794
10 : USD 0.705
100 : USD 0.4547
1000 : USD 0.3632
2000 : USD 0.3486
5000 : USD 0.3476
25000 : USD 0.3269
50000 : USD 0.3204
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Transistor Type
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Rohs Mouser
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BUK7575-55A,127 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7575-55A,127 and other electronic components in the MOSFET category and beyond.

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BUK7575-55A N-channel TrenchMOS standard level FET Rev. 02 4 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage I drain current V =10V T =25C --20.3A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --62 W tot mb dissipation Static characteristics R drain-source V =10V I =10A --150m DSon GS D on-state T = 175 C see Figure 12 j resistance see Figure 13 V =10V I =10A - 6475m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =11A V 55 V --30.3mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) TO-220AB

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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