Product Information

BUK7613-60E,118

BUK7613-60E,118 electronic component of Nexperia

Datasheet
MOSFET N-channel TrenchMOS standard level FET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6175 ea
Line Total: USD 1.62

155 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11282 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.518
10 : USD 1.2765
100 : USD 1.0419
800 : USD 0.774
2400 : USD 0.7659
4800 : USD 0.7659
9600 : USD 0.7659

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
BUK7618-55,118 electronic component of Nexperia BUK7618-55,118

MOSFET TAPE13 PWR-MOS
Stock : 0

BUK761R6-40E,118 electronic component of Nexperia BUK761R6-40E,118

NXP Semiconductors MOSFET N-channel TrenchMOS intermed level FET
Stock : 0

BUK7628-100A118 electronic component of NXP BUK7628-100A118

NXP Semiconductors MOSFET TAPE13 PWR-MOS
Stock : 1

BUK761R8-30C,118 electronic component of NXP BUK761R8-30C,118

Trans MOSFET N-CH 30V 312A Automotive 3-Pin(2+Tab) D2PAK T/R
Stock : 0

BUK761R7-40E,118 electronic component of Nexperia BUK761R7-40E,118

MOSFET N-channel TrenchMOS standard level FET
Stock : 385

BUK7620-100A,118 electronic component of NXP BUK7620-100A,118

MOSFET TAPE13 PWR-MOS
Stock : 0

BUK7626-100B,118 electronic component of Nexperia BUK7626-100B,118

N-Channel 100 V 49A (Tc) 157W (Tc) Surface Mount D2PAK
Stock : 0

BUK7623-75A,118 electronic component of NXP BUK7623-75A,118

Trans MOSFET N-CH 75V 53A Automotive 3-Pin(2+Tab) D2PAK T/R
Stock : 0

BUK761R6-40E electronic component of Nexperia BUK761R6-40E

MOSFET, N CH, 40V, 120A, D2PAK
Stock : 0

BUK7620-55A,118 electronic component of Nexperia BUK7620-55A,118

MOSFET TAPE13 PWR-MOS
Stock : 0

Image Description
BUK7618-55,118 electronic component of Nexperia BUK7618-55,118

MOSFET TAPE13 PWR-MOS
Stock : 0

BUK761R6-40E,118 electronic component of Nexperia BUK761R6-40E,118

NXP Semiconductors MOSFET N-channel TrenchMOS intermed level FET
Stock : 0

BUK7628-100A118 electronic component of NXP BUK7628-100A118

NXP Semiconductors MOSFET TAPE13 PWR-MOS
Stock : 1

BUK762R0-40E,118 electronic component of Nexperia BUK762R0-40E,118

MOSFET N-channel TrenchMOS standard level FET
Stock : 0

BUK762R7-30B,118 electronic component of NXP BUK762R7-30B,118

Trans MOSFET N-CH 30V 241A Automotive 3-Pin(2+Tab) D2PAK T/R
Stock : 0

BUK7631-100E,118 electronic component of Nexperia BUK7631-100E,118

NXP Semiconductors MOSFET
Stock : 0

BUK763R4-30B electronic component of NXP BUK763R4-30B

Trans MOSFET N-CH 30V 198A Automotive 3-Pin(2+Tab) D2PAK
Stock : 0

BUK763R6-40C,118 electronic component of NXP BUK763R6-40C,118

Trans MOSFET N-CH 40V 167A Automotive 3-Pin(2+Tab) D2PAK T/R
Stock : 0

BUK763R8-80E,118 electronic component of Nexperia BUK763R8-80E,118

NXP Semiconductors MOSFET N-Chan 80V 120A
Stock : 3774

BUK765R0-100E.118 electronic component of Nexperia BUK765R0-100E.118

Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK
Stock : 0

BUK7613-60E N-channel TrenchMOS standard level FET 28 July 2016 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with VGS(th) rating of greater than 1V at 175 C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 10 V T = 25 C Fig. 2 - - 58 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 96 W tot mb Static characteristics R drain-source on-state V = 10 V I = 15 A T = 25 C - 9.44 13 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 15 A V = 48 V V = 10 V - 6.9 - nC GD D DS GS Fig. 13 Fig. 14Nexperia BUK7613-60E N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7613-60E D2PAK plastic single-ended surface-mounted package SOT404 (D2PAK) 3 leads (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK7613-60E BUK7613-60E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 96 W tot mb I drain current T = 25 C V = 10 V Fig. 2 - 58 A D mb GS T = 100 C V = 10 V Fig. 2 - 41 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 234 A DM mb p T storage temperature -55 175 C stg T junction temperature -55 175 C j BUK7613-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted