BUK7Y07-30B,115 NXP

BUK7Y07-30B,115 electronic component of NXP
BUK7Y07-30B,115 NXP
BUK7Y07-30B,115 MOSFETs
BUK7Y07-30B,115  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BUK7Y07-30B,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7Y07-30B,115 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK7Y07-30B,115
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 75A Automotive 5-Pin(4+Tab) LFPAK T/R
Datasheet: BUK7Y07-30B,115 Datasheet (PDF)
Price (USD)
12: USD 2.8902 ea
Line Total: USD 34.68 
Availability : 0
  
QtyUnit Price
12$ 2.8902
   
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Continuous Drain Current
Gate-Source Voltage Max
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Type
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Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the BUK7Y07-30B,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7Y07-30B,115 and other electronic components in the MOSFETs category and beyond.

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BUK7Y07-30B N-channel TrenchMOS standard level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V Loads General purpose power switch Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current V =10V T =25C --75 A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --105W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 57m DSon GS D on-state T =25C see Figure 12 j resistance see Figure 13 Avalanche ruggedness E non-repetitive I =75A V 30 V --198mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =24V -10.7-nC GD D DS V = 10 V see Figure 14 GSBUK7Y07-30B Nexperia N-channel TrenchMOS standard level FET 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y07-30B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK7Y07-30B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 7 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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