Product Information

BYV29G-600,127

BYV29G-600,127 electronic component of NXP

Datasheet
Rectifiers 600V 9A Diode Fast Recovery Rect

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.4911 ea
Line Total: USD 2946.6

0 - Global Stock
MOQ: 6000  Multiples: 6000
Pack Size: 6000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 6000
Multiples : 6000
6000 : USD 0.4319
10000 : USD 0.4153
25000 : USD 0.4046

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Packaging
Product
Brand
Operating Temperature Range
Maximum Reverse Leakage Current
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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BYV29G-600 Ultrafast power diode 29 September 2018 Product data sheet 1. General description Ultrafast power diode in a SOT226A (I2PAK) plastic package 2. Features and benefits Fast switching High thermal cycling performance Low forward voltage drop Low on-state losses Low profile package facilitating compact designs Low thermal resistance Soft recovery minimizes power-consuming oscillations 3. Applications Discontinuous Current Mode (DCM) Power Factor Correction (PFC) Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 600 V R I average forward = 0.5 T 123 C SQW Fig. 1 - - 9 A F(AV) mb current Fig. 2 I non-repetitive peak t = 8.3 ms T = 25 C SIN - - 77 A FSM p j(init) forward current t = 10 ms T = 25 C SIN - - 70 A p j(init) Static characteristics V forward voltage I = 8 A T = 25 C Fig. 4 - 1.12 1.25 V F F j I = 20 A T = 25 C Fig. 4 - 1.31 1.45 V F j I = 8 A T = 150 C - 0.97 1.11 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 50 60 ns rr F R F T = 25 C Fig. 4 jWeEn Semiconductors BYV29G-600 Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. no connection 2 2 K cathode 1 3 003aad550 3 A anode mb K mounting base cathode 1 2 3 I2PAK (SOT226A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV29G-600 I2PAK plastic single-ended package (I2PAK) TO-262 SOT226A BYV29G-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 29 September 2018 2 / 10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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