Product Information

BYV32EB-200,118

BYV32EB-200,118 electronic component of NXP

Datasheet
Rectifiers TAPE-7 REC-EPI
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7431 ea
Line Total: USD 1.74

12475 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6310 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 1.426
10 : USD 1.219
100 : USD 0.9476
500 : USD 0.8602
800 : USD 0.6647
2400 : USD 0.6371
4800 : USD 0.6129
9600 : USD 0.6107
24800 : USD 0.5899

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYV32EB-200 Dual ultrafast power diode Rev.02 - 26 November 2019 Product data sheet 1. General description Dual ultrafast power diode in a TO263 (D2PAK) surface-mountable plastic package. 2. Features and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance Very low on-state loss Soft recovery characteristic minimizes power consuming oscillations Surface-mountable package 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 200 V RRM voltage I average output current = 0.5 square-wave pulse T 115 C 20 A O(AV) mb both diodes conducting Fig. 1 Fig. 2 I repetitive peak reverse = 0.001 t = 2 s 0.2 A RRM p current V electrostatic discharge HBM C = 250 pF R = 1.5 k all pins 8 kV ESD voltage Static characteristics V forward voltage I = 8 A T = 150 C Fig. 4 - 0.72 0.85 V F F j I = 20 A T = 25 C - 1 1.15 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 20 25 ns rr F R F T = 25 C ramp recovery Fig. 5 jWeEn Semiconductors BYV32EB-200 Dual ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 2 K cathode 1 A1 A2 3 A2 anode 2 K mb K mounting base cathode sym125 TO-263 (D2PAK) 1 it is not possible to make a connection to pin 2 of the TO263 package 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BYV32EB-200 TO263 BYV32EB-200,118 Reel 800 TO263N 26-Sep-2016 7. Marking Table 4. Marking codes Type number Marking codes BYV32EB-200 BYV32EB-200 BYV32EB-200 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 26 November 2019 2 / 10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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