MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor Rev. V6 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty MAGX-001090-600L00 Features GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 C Reflow Compatible +50 V Typical Operation MTTF = 600 years (T < 200 C) J Applications Civilian Air Traffic Control (ATC), L-Band Secondary Radar for IFF and Mode-S avionics. MAGX-001090-600L0S Military Radar for IFF and Data Links. Description The MAGX-001090-600L00 and MAGX-001090-600L0S are gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for todays demanding application 1 Ordering Information needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch Part Number Description load conditions compared with older semiconductor technologies. MAGX-001090-600L00 Flanged MAGX-001090-600L0S Flangeless 1030 - 1090 MHz MAGX-A11090-600L00 Evaluation Board 1. When ordering the evaluation board, please indicate on sales order notes if it will be used for: A. Standard Flange devices B. Earless Flange devices Typical RF Performance under Standard Operating Conditions, P = 600 W (Peak) OUT VSWR-S VSWR-T Freq P Gain I Eff. RL Droop +1dB OD IN D (3:1) (5:1) (MHz) (W) (dB) (A) (%) (dB) (dB) (W) 1030 4.95 20.8 20.4 58.6 -16.8 0.24 649 S P 1090 4.50 21.3 18.6 64.4 -11.0 0.23 661 S P * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor Rev. V6 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Electrical Specifications: Freq. = 1030 - 1090 MHz, T = 25 C A Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power P - 4.3 6.7 W IN Power Gain G 19.5 21.4 - dB P V = 50 V, I = 600 mA, Drain Efficiency 55 63 - % DD DQ D Pulse Width = 32 s, Duty Cycle = 2%, Pulse Droop Droop - 0.2 0.3 dB P = 600 W Peak (12 W avg.) OUT Load Mismatch Stability VSWR-S - 3:1 - - Load Mismatch Tolerance VSWR-T - 5:1 - - 2 Mode-S ELM Pulse Width Conditions V = 50 V, I = 400 mA, Peak Input Power DD DQ P - 4.6 - W IN 48 pulses of 32 s on and 18 s off, Power Gain G - 20.7 - dB repeat every 24 ms, P Overall Duty Factor = 6.4%, Drain Efficiency - 61 - % P = 550 W Peak (35.2 W avg.) D OUT 2. For Mode-S ELM pulse conditions power measurements are obtained as follows: RF input / output power is measured at the middle of the 25th pulse in the burst (t = 1.216 ms) Droop measurements are defined as the drop in power from the 5th pulse (t = 216us) and 43rd pulse (t = 2.116ms) in the burst. Electrical Characteristics: T = 25 C A Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics Drain-Source Leakage Current V = -8 V, V = 175 V I - 1.0 30 mA GS DS DS Gate Threshold Voltage V = 5 V, I = 75 mA V -5 -3.1 -2 V DS D GS (TH) Forward Transconductance V = 5 V, I = 17.5 mA G 12.5 19.2 - S DS D M Dynamic Characteristics Input Capacitance Not applicable - Input matched C N/A N/A N/A pF ISS Output Capacitance C - 55 - pF OSS V = 50 V, V = -8 V, DS GS Freq. = 1 MHz Reverse Transfer Capacitance C - 5.5 - pF RSS 2 22 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: