EC103D1,116 NXP

EC103D1 SCR 17 August 201 8 Product data sheet 1. General description Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package. 2. Features and benefits Planar passivated for voltage ruggedness and reliability Ultra sensitive gate 3. Applications Electronic ballasts Safety shut down and protection circuits Sensing circuits Smoke detectors Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 400 V DRM state voltage V repetitive peak reverse - - 400 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 8 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p I average on-state half sine wave T 92 C Fig. 1 - - 0.5 A T(AV) lead current I RMS on-state current half sine wave T 92 C Fig. 2 - - 0.8 A T(RMS) lead Fig. 3 Static characteristics I gate trigger current V = 12 V I = 10 mA T = 25 C - 3 12 A GT D T j Fig. 7WeEn Semiconductors EC103D1 SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol A anode 1 A K G 2 G gate sym037 K cathode 3 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version EC103D1 TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 EC103D1 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 August 2018 2 / 12