EC103D1WX NXP

EC103D1W SCR 21 August 2018 Product data sheet 1. General description Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT223 surface mountable plastic package. 2. Features and benefits Planar passivated for voltage ruggedness and reliability Ultra sensitive gate Surface mountable package 3. Applications Electronic ballasts Safety shut down and protection circuits Sensing circuits Smoke detectors Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 400 V RRM voltage I average on-state half sine wave T 114 C Fig. 1 - - 0.5 A T(AV) sp current I RMS on-state current half sine wave T 114 C Fig. 2 - - 0.8 A T(RMS) sp Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 8 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 9 A j(init) t = 8.3 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 9 - 3 12 A GT D T j Dynamic characteristics dV /dt rate of rise of off-state V = 268 V T = 125 C (V = 67% - 150 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuitWeEn Semiconductors EC103D1W SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 4 A K G 2 A anode sym037 3 G gate 1 2 3 4 mb mounting base connected to SC-73 (SOT223) anode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version EC103D1W SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads EC103D1W All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 21 August 2018 2 / 13