Product Information

EC103D1WX

EC103D1WX electronic component of WeEn Semiconductor

Datasheet
SCRs 400v Sc-73 Scr Sens Gate

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.0474 ea
Line Total: USD 47.4

5820 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
5820 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1000
Multiples : 1000

Stock Image

EC103D1WX
WeEn Semiconductor

1000 : USD 0.0464
2000 : USD 0.0464

5820 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1000
Multiples : 1000

Stock Image

EC103D1WX
WeEn Semiconductor

1000 : USD 0.0483

     
Manufacturer
Product Category
Rohs
Package
Brand Category
Type
Voltage - Off State Max
Current - On State It Av Max
Current - On State It Rms Max
Voltage - Gate Trigger Vgt Max
Current - Gate Trigger Igt Max
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EC103D1W SCR 21 August 2018 Product data sheet 1. General description Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT223 surface mountable plastic package. 2. Features and benefits Planar passivated for voltage ruggedness and reliability Ultra sensitive gate Surface mountable package 3. Applications Electronic ballasts Safety shut down and protection circuits Sensing circuits Smoke detectors Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 400 V RRM voltage I average on-state half sine wave T 114 C Fig. 1 - - 0.5 A T(AV) sp current I RMS on-state current half sine wave T 114 C Fig. 2 - - 0.8 A T(RMS) sp Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 8 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 9 A j(init) t = 8.3 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 9 - 3 12 A GT D T j Dynamic characteristics dV /dt rate of rise of off-state V = 268 V T = 125 C (V = 67% - 150 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuitWeEn Semiconductors EC103D1W SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 4 A K G 2 A anode sym037 3 G gate 1 2 3 4 mb mounting base connected to SC-73 (SOT223) anode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version EC103D1W SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads EC103D1W All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 21 August 2018 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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