MMA25312BT1 NXP

DocumentNumber:MMA25312B FreescaleSemiconductor Rev. 2, 9/2014 Technical Data HeterojunctionBipolarTransistor MMA25312BT1 Technology(InGaPHBT) High Efficiency/Linearity Amplifier The MMA25312B is a 2--stage high efficiency InGaP HBT driver amplifier 2300--2700MHz,26dB designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX 31dBm (802.16e)andwirelessbroadbandmeshnetworks.Itissuitableforapplications InGaPHBTLINEARAMPLIFIER with frequencies from 2300 to 2700 MHz using simple external matching components witha3to5Vsupply. Typical Performance: V =V =V =5Vdc,I = 150 mA CC1 CC2 BIAS CQ P G EVM out ps Frequency (dBm) (dB) (%) TestSignal 2450 MHz 20.5 27.4 3.0 WLAN (802.11g) QFN3 3 2350 MHz 23.0 27.2 3.0 WiMAX (802.16e) Features Frequency: 2300--2700 MHz P1dB: 31 dBm 2500 MHz Power Gain: 26 dB 2500 MHz Third Order Output Intercept Point: 40 dBm 2500 MHz Active Bias Control (On--chip) Single 3 to 5 V Supply Single--ended Power Detector Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalCWPerformance Table2.MaximumRatings 2300 2500 2700 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V CC Small--SignalGain G 26 26 24.5 dB p Supply Current I 550 mA CC (S21) RF Input Power P 30 dBm in Input Return Loss IRL --14 --12 --12 dB (S11) Storage Temperature Range T --65to+150 C stg Junction Temperature T 175 C Output Return Loss ORL --11 --13 --15 dB J (S22) Power Output P1dB 30 31 29.8 dBm 1dB Compression 1. V =V =V =5Vdc,T =25 C, 50 ohm system, CW CC1 CC2 BIAS A Application Circuit Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 92 C/W JC Case Temperature 91C, V =V =V =5Vdc CC1 CC2 BIAS 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =V =V =5 Vdc, 2500 MHz, T =25 C, 50 ohm system, in Freescale CW Application CC1 CC2 BIAS A Circuit) Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 24.5 26 dB p Input Return Loss (S11) IRL --12 dB Output Return Loss (S22) ORL --13 dB Power Output 1dB Compression P1dB 31 dBm Third Order Output Intercept Point, Two--Tone CW OIP3 40 dBm Noise Figure NF 3.8 dB Supply Current I 110 124 138 mA CQ Supply Voltage V 5 V CC Table5.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JESD 22--A114) 2 Machine Model(per EIA/JESD 22--A115) A Charge Device Model(per JESD 22--C101) IV Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C V V V BA2 CC1 CC1 V V V BA2 CC1 CC1 V RF out 12 11 10 BA1 BIASBIAS CIRCUITCIRCUIT V BA119 RF out RF out V RF BIAS28 out V BIAS RF V 37 CC2 V in CC2 45 6 RF in N.C. N.C. PDET PDET Figure1.FunctionalBlockDiagram Figure2.PinConnections MMA25312BT1 RF DeviceData Freescale Semiconductor, Inc. 2