Document Number: MRF1518N Freescale Semiconductor Rev. 11, 6/2009 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF1518NT1 Designed for broadband commercial and industrial applications with frequen- cies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. D Specified Performance 520 MHz, 12.5 Volts Output Power 8 Watts 520 MHz, 8 W, 12.5 V Power Gain 13 dB LATERAL N-CHANNEL Efficiency 60% BROADBAND Capable of Handling 20:1 VSWR, 15.5 Vdc, RF POWER MOSFET 520 MHz, 2 dB Overdrive Features Excellent Thermal Stability G Characterized with Series Equivalent Large-Signal Impedance Parameters N Suffix Indicates Lead-Free Terminations. RoHS Compliant. S In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel. CASE 466-03, STYLE 1 PLD-1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +40 Vdc DSS Gate-Source Voltage V 20 Vdc GS Drain Current Continuous I 4 Adc D (1) Total Device Dissipation T = 25C P 62.5 W C D Derate above 25C 0.50 W/C Storage Temperature Range T - 65 to +150 C stg Operating Junction Temperature T 150 C J Table 2. Thermal Characteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 2 C/W JC Table 3. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C T T J C 1. Calculated based on the formula P = D R JC 2. MTTF calculator available at Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Current I 1 Adc DSS (V = 40 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 1 Adc GSS (V = 10 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1 1.6 2.1 Vdc GS(th) (V = 12.5 Vdc, I = 100 A) DS D Drain-Source On-Voltage V 0.4 Vdc DS(on) (V = 10 Vdc, I = 1 Adc) GS D Dynamic Characteristics Input Capacitance C 66 pF iss (V = 12.5 Vdc, V = 0, f = 1 MHz) DS GS Output Capacitance C 33 pF oss (V = 12.5 Vdc, V = 0, f = 1 MHz) DS GS Reverse Transfer Capacitance C 4.5 pF rss (V = 12.5 Vdc, V = 0, f = 1 MHz) DS GS Functional Tests (In Freescale Test Fixture) Common-Source Amplifier Power Gain G 13 dB ps (V = 12.5 Vdc, P = 8 Watts, I = 150 mA, f = 520 MHz) DD out DQ Drain Efficiency 60 % (V = 12.5 Vdc, P = 8 Watts, I = 150 mA, f = 520 MHz) DD out DQ MRF1518NT1 RF Device Data Freescale Semiconductor 2