Document Number: MRF1535N Freescale Semiconductor Rev. 13, 6/2009 Technical Data RF Power Field Effect Transistors MRF1535NT1 N-Channel Enhancement-Mode Lateral MOSFETs MRF1535FNT1 Designed for broadband commercial and industrial applications with frequen- cies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 520 MHz, 35 W, 12.5 V 12.5 volt mobile FM equipment. LATERAL N-CHANNEL Specified Performance 520 MHz, 12.5 Volts BROADBAND Output Power 35 Watts RF POWER MOSFETs Power Gain 13.5 dB Efficiency 55% Capable of Handling 20:1 VSWR, 15.6 Vdc, 520 MHz, 2 dB Overdrive Features Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz CASE 1264-10, STYLE 1 450-520 MHz TO-272-6 WRAP 200 C Capable Plastic Package PLASTIC MRF1535NT1 N Suffix Indicates Lead-Free Terminations. RoHS Compliant. In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC MRF1535FNT1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +40 Vdc DSS Gate-Source Voltage V 20 Vdc GS Drain Current Continuous I 6 Adc D (1) Total Device Dissipation T = 25C P 135 W C D Derate above 25C 0.50 W/C Storage Temperature Range T - 65 to +150 C stg Operating Junction Temperature T 200 C J Table 2. Thermal Characteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.90 C/W JC Table 3. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C T T J C 1. Calculated based on the formula P = D R JC 2. MTTF calculator available at Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V 60 Vdc (BR)DSS (V = 0 Vdc, I = 100 Adc) GS D Zero Gate Voltage Drain Current I 1 Adc DSS (V = 60 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 0.3 Adc GSS (V = 10 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1 2.6 Vdc GS(th) (V = 12.5 Vdc, I = 400 A) DS D Drain-Source On-Voltage R 0.7 DS(on) (V = 5 Vdc, I = 0.6 A) GS D Drain-Source On-Voltage V 1 Vdc DS(on) (V = 10 Vdc, I = 2.0 Adc) GS D Dynamic Characteristics Input Capacitance (Includes Input Matching Capacitance) C 250 pF iss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS Output Capacitance C 150 pF oss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS Reverse Transfer Capacitance C 20 pF rss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS RF Characteristics (In Freescale Test Fixture) Common-Source Amplifier Power Gain G 13.5 dB ps (V = 12.5 Vdc, P = 35 Watts, I = 500 mA) f = 520 MHz DD out DQ Drain Efficiency 55 % (V = 12.5 Vdc, P = 35 Watts, I = 500 mA) f = 520 MHz DD out DQ MRF1535NT1 MRF1535FNT1 RF Device Data Freescale Semiconductor 2