DocumentNumber:MRF6S21140H FreescaleSemiconductor Rev. 5, 2/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6S21140HR3 DesignedforW--CDMAbasestationapplicationswithfrequenciesfrom2110 to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifier MRF6S21140HSR3 applications. TobeusedinClass ABfor PCN--PCS/cellularradio andWLL applications. Typical2--carrier W--CDMA Performance: V =28Volts,I = 1200mA, DD DQ P = 30Watts Avg., f = 2112.5MHz, ChannelBandwidth= 3.84MHz, out 2110--2170MHz,30WAVG.,28V PAR = 8.5dB 0.01%Probability onCCDF. 2xW--CDMA Power Gain 15.5dB LATERALN--CHANNEL DrainEfficiency 27.5% RFPOWERMOSFETs IM3 10MHz Offset --37dBc in3.84MHz ChannelBandwidth ACPR 5MHz Offset --41dBc in3.84MHz ChannelBandwidth Capableof Handling10:1VSWR, 28Vdc, 2140MHz, 140Watts CW Output Power Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use QualifiedUptoaMaximum of 32V Operation DD CASE465B--03,STYLE1 IntegratedESD Protection NI--880 Optimizedfor Doherty Applications MRF6S21140HR3 RoHSCompliant InTapeandReel. R3Suffix = 250Units per 56mm, 13inchReel. CASE465C--02,STYLE1 NI--880S MRF6S21140HSR3 Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+68 Vdc DSS Gate--SourceVoltage V --0.5,+12 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,140W CW 0.35 CaseTemperature75C,30W CW 0.38 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =68Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1 2 3 Vdc GS(th) (V =10Vdc,I =300Adc) DS D GateQuiescentVoltage V 2 2.8 4 Vdc GS(Q) (V =28Vdc,I =1200mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.21 0.3 Vdc DS(on) (V =10Vdc,I =3Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 2 pF rss (V =28Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS FunctionalTests(InFreescaleTestFixture,50ohmsystem)V =28Vdc,I =1200mA,P =30WAvg.,f1=2112.5MHz,f2= DD DQ out 2122.5MHz,2--carrierW--CDMA,3.84MHz ChannelBandwidthCarriers.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHz Offset.IM3measuredin3.84MHz ChannelBandwidth 10MHz Offset.PAR=8.5dB 0.01%Probability onCCDF. PowerGain G 14.5 15.5 17.5 dB ps DrainEfficiency 26 27.5 % D IntermodulationDistortion IM3 --37 --35 dBc AdjacentChannelPowerRatio ACPR --41 --38 dBc InputReturnLoss IRL --15 --9 dB 1. Partis internally matchedbothoninputandoutput. MRF6S21140HR3MRF6S21140HSR3 RF DeviceData FreescaleSemiconductor 2