DocumentNumber:MRF8S8260H Freescale Semiconductor Rev. 1, 2/2012 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S8260HR3 Designed for CDMA base station applications with frequencies from 790 to 895MHz.CanbeusedinClassABandClassCforalltypicalcellularbase MRF8S8260HSR3 stationmodulationformats. Typical Single--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 1500 mA, P = 70 Watts Avg., IQ Magnitude Clipping, Channel out Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB 0.01% Probability 850--895MHz,70WAVG.28V onCCDF. SINGLEW--CDMA LATERALN--CHANNEL G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) RFPOWERMOSFETs 850 MHz 21.3 36.2 6.5 --37.0 875 MHz 21.4 37.4 6.3 --36.7 895 MHz 21.1 37.5 6.2 --36.9 (1) Capable of Handling 7:1 VSWR, 32 Vdc, 875 MHz, 390 Watts CW Output Power (3dB Input Overdrivefrom RatedP ), Designed for out Enhanced Ruggedness (1) Typical P 1 dB Compression Point 260Watts CW out CASE465B--04 Features NI--880 100% PAR Tested for Guaranteed Output Power Capability MRF8S8260HR3 Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. CASE465C--03 For R5 Tape and Reel option, see p. 16. NI--880S MRF8S8260HSR3 Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +70 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD StorageTemperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (2,3) OperatingJunctionTemperature T 225 C J CW Operation T =25 C CW 201 W C Derate above 25 C 0.94 W/ C Table2.ThermalCharacteristics (3,4) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 83C, 70W CW, 28Vdc, I =1500 mA, 895 MHz 0.36 DQ (1) Case Temperature 80C, 260 W CW ,28Vdc,I =1500 mA, 895 MHz 0.31 DQ 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous useat maximum temperaturewillaffect MTTF. 3. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.5 2.3 3.0 Vdc GS(th) (V =10Vdc,I =1380 Adc) DS D Gate Quiescent Voltage V 2.3 3.0 3.8 Vdc GS(Q) (V =28Vdc,I =1500 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.24 0.3 Vdc DS(on) (V =10Vdc,I =3.0Adc) GS D (1) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =1500 mA, P =70W Avg.,f=895MHz, DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR=7.5 dB 0.01%Probability on CCDF. ACPRmeasured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 19.6 21.1 22.6 dB ps Drain Efficiency 35.5 37.5 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 5.8 6.2 dB Adjacent ChannelPowerRatio ACPR --36.9 --35.0 dBc Input Return Loss IRL --16 --12 dB TypicalBroadbandPerformance (InFreescaleTestFixture,50ohm system)V =28Vdc,I =1500 mA, P =70WAvg., DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR=7.5 dB 0.01%Probability on CCDF. ACPRmeasured in 3.84 MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 850 MHz 21.3 36.2 6.5 --37.0 --9 875 MHz 21.4 37.4 6.3 --36.7 --13 895 MHz 21.1 37.5 6.2 --36.9 --16 1. Part internally matched both on input and output. (continued) MRF8S8260HR3MRF8S8260HSR3 RF DeviceData Freescale Semiconductor, Inc. 2