DocumentNumber:MRF8S9170N FreescaleSemiconductor Rev. 1, 5/2010 Technical Data RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF8S9170NR3 Designedfor CDMA basestationapplications withfrequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base stationmodulationformats. Typical Single--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 1000 mA, P = 50 Watts Avg., IQ Magnitude Clipping, Channel out Bandwidth= 3.84MHz, Input Signal PAR = 7.5dB 0.01% Probability 920--960MHz,50WAVG.,28V onCCDF. SINGLEW--CDMA LATERALN--CHANNEL G OutputPAR ACPR ps D RFPOWERMOSFET Frequency (dB) (%) (dB) (dBc) 920 MHz 19.3 36.5 6.0 --36.6 940 MHz 19.1 36.1 6.1 --36.7 960 MHz 18.9 36.0 6.0 --36.1 Capable of Handling10:1 VSWR, 32Vdc, 940 MHz, 250 Watts CW Output Power (3dB Input Overdrivefrom RatedP ), Designedfor out Enhanced Ruggedness Typical P 1dB CompressionPoint 177Watts CW out CASE 2021--03,STYLE1 Features OM--780--2 100% PAR Tested for Guaranteed Output Power Capability CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltage Range for Improved Class C Operation Designedfor Digital PredistortionError CorrectionSystems Optimizedfor Doherty Applications 225C Capable Plastic Package RoHSCompliant In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +70 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 78C, 50W CW, 28Vdc, I =1000 mA 0.38 DQ Case Temperature 82C, 170W CW, 28Vdc, I =1000 mA 0.33 DQ 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2(Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.5 2.3 3 Vdc GS(th) (V =10Vdc,I =355 Adc) DS D Gate Quiescent Voltage V 2.3 3.1 3.8 Vdc GS(Q) (V =28Vdc,I =1000 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.19 0.3 Vdc DS(on) (V =10Vdc,I =2.9Adc) GS D (1) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =1000 mA, P =50W Avg., f =920MHz, DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 18.0 19.3 21.0 dB ps Drain Efficiency 34.0 36.5 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 5.5 6.0 dB Adjacent ChannelPowerRatio ACPR --36.6 --34.5 dBc Input Return Loss IRL --10 --7 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =1000 mA, P =50WAvg., DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 920 MHz 19.3 36.5 6.0 --36.6 --10 940 MHz 19.1 36.1 6.1 --36.7 --12 960 MHz 18.9 36.0 6.0 --36.1 --16 1. Part internally matched both on input and output. (continued) MRF8S9170NR3 RF DeviceData Freescale Semiconductor 2