Document Number: MRFE6P3300H
Freescale Semiconductor
Rev. 2, 12/2009
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
MRFE6P3300HR3
frequencies from 470 to 860 MHz. The high gain and broadband performance
of this device make it ideal for large- signal, common- source amplifier
applications in 32 volt analog or digital television transmitter equipment.
Typical Narrowband Two-Tone Performance @ 860 MHz: V = 32 Volts,
DD
I = 1600 mA, P = 270 Watts PEP
DQ out
Power Gain 20.4 dB
Drain Efficiency 44.8%
860 MHz, 300 W, 32 V
IMD -28.8 dBc
LATERAL N-CHANNEL
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive,
RF POWER MOSFET
Designed for Enhanced Ruggedness
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Designed for Push-Pull Operation Only
Qualified Up to a Maximum of 32 V Operation
DD
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
CASE 375G-04, STYLE 1
NI-860C3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V -0.5, +66 Vdc
DSS
Gate-Source Voltage V -0.5, +12 Vdc
GS
Storage Temperature Range T -65 to +150 C
stg
Case Operating Temperature T 150 C
C
(1,2)
Operating Junction Temperature T 225 C
J
Table 2. Thermal Characteristics
(2,3)
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R C/W
JC
Case Temperature 80C, 300 W CW 0.23
Case Temperature 82C, 220 W CW 0.24
Case Temperature 79C, 100 W CW 0.27
Case Temperature 81C, 60 W CW 0.27
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 3B (Minimum)
Machine Model (per EIA/JESD22-A115) C (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
(1)
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V = 66 Vdc, V = 0 Vdc)
DS GS
(4)
Zero Gate Voltage Drain Leakage Current I 1 Adc
DSS
(V = 32 Vdc, V = 0 Vdc)
DS GS
Gate-Source Leakage Current I 1 Adc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS DS
(1)
On Characteristics
Gate Threshold Voltage V 1 2.2 3 Vdc
GS(th)
(V = 10 Vdc, I = 350 Adc)
DS D
(3)
Gate Quiescent Voltage V 2 2.8 4 Vdc
GS(Q)
(V = 32 Vdc, I = 1600 mAdc, Measured in Functional Test)
DD D
Drain-Source On-Voltage V 0.22 0.3 Vdc
DS(on)
(V = 10 Vdc, I = 2.4 Adc)
GS D
(1,2)
Dynamic Characteristics
(4)
Reverse Transfer Capacitance C 1.22 pF
rss
(V = 32 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS GS
(4)
Output Capacitance C 217 pF
oss
(V = 32 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS GS
(1)
Input Capacitance C 1060 pF
iss
(V = 32 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS GS
(3)
Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) V = 32 Vdc, I = 1600 mA, P = 270 W PEP,
DD DQ out
f1 = 857 MHz, f2 = 863 MHz
Power Gain G 19 20.4 23 dB
ps
Drain Efficiency 41 44.8 %
D
Intermodulation Distortion IMD -28.8 -27 dBc
Input Return Loss IRL -18.4 -9 dB
1. Each side of the device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
4. Drains are tied together internally as this is a total device value.
MRFE6P3300HR3
RF Device Data
Freescale Semiconductor
2