Product Information

BF1108R,215

BF1108R,215 electronic component of NXP

Datasheet
Transistors RF MOSFET TAPE7 MOS-RFSS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.3591
6000 : USD 0.3409
9000 : USD 0.3226
12000 : USD 0.3044
15000 : USD 0.2922
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.8316
10 : USD 0.7346
25 : USD 0.6646
100 : USD 0.5814
250 : USD 0.5107
500 : USD 0.4504
1000 : USD 0.3679
3000 : USD 0.3402
6000 : USD 0.3238
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Package Case
Brand
Gate Source Breakdown Voltage
Rds On
Factory Pack Quantity :
Rohs Mouser
Height
Length
Type
Width
Number Of Channels
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BF1108 BF1108R Silicon RF switches Rev. 04 29 May 2008 Product data sheet 1. Product prole 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Specially designed for low loss RF switching up to 1 GHz 1.3 Applications n Various RF switching applications such as: u Passive loop through for VCR tuner u Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit 1 L on-state insertion loss R =R =50 f 1 GHz -- 2 dB ins(on) S L V =V =0V I =0mA SK DK F ISL off-state isolation R =R =50 f 1 GHz 30 --dB off S L V =V =5V I =1mA SK DK F R drain-source on-state V =0V I = 1 mA - 12 20 DSon KS D resistance V gate-source pinch-off V =1V I =20 A- - 3 -4V GS(p) DS D voltage 1 I = diode forward current. FBF1108 BF1108R NXP Semiconductors Silicon RF switches 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol BF1108 (SOT143B) 1 FET gate diode anode 4 3 43 2 diode cathode 1 3 source 1 4 drain 12 1 2 001aai042 BF1108R (SOT143R) 1 FET gate diode anode 3 4 34 2 diode cathode 1 3 source 1 4 drain 21 21 001aai043 1 Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1108 - plastic surface-mounted package 4 leads SOT143B BF1108R - plastic surface-mounted package reverse pinning SOT143R 4 leads 4. Marking Table 4. Marking Type number Marking code BF1108 NGp BF1108R NHp BF1108 BF1108R 4 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 29 May 2008 2 of 10

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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