NX3P1107UKZ NXP

NX3P1107 Logic controlled high-side power switch Rev. 1 9 January 2013 Product data sheet 1. General description The NX3P1107 is a high-side load switch which features a low ON resistance P-channel MOSFET that supports more than 1.5 A of continuous current. Designed for operation from 0.9 V to 3.6 V, it is used in power domain isolation applications to reduce power dissipation and extend battery life. The enable logic includes integrated logic level translation making the device compatible with lower voltage processors and controllers. The NX3P1107 is ideal for portable, battery operated applications due to low ground current and ultra-low OFF-state current. 2. Features and benefits Wide supply voltage range from 0.9 V to 3.6 V Very low ON resistance: 34 m at a supply voltage of 3.3 V High noise immunity Low OFF-state leakage current (2.0 A maximum) 1.2 V control logic at a supply voltage of 3.6 V High current handling capability (1.5 A continuous current) Turn-on slew rate limiting ESD protection: HBM JESD22-A114F Class 3A exceeds 4000 V CDM AEC-Q100-011 revision B exceeds 500 V Specified from 40 C to +85 C 3. Applications Cell phone Digital cameras and audio devices Portable and battery-powered equipmentNX3P1107 NXP Semiconductors Logic controlled high-side power switch 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version NX3P1107UK 40 C to +85 C WLCSP4 wafer level chip-size package 4 bumps 0.96 NX3P1107/NX3P1108 0.96 0.55 mm. (Backside coating included) 5. Marking Table 2. Marking codes Type number Marking code NX3P1107UK x7 6. Functional diagram EN VIN VOUT 001aao342 Fig 1. Logic symbol Fig 2. Logic diagram (simplified schematic) 7. Pinning information 7.1 Pinning Fig 3. Pin configuration for WLCSP4 Fig 4. Ball mapping for WLCSP4 NX3P1107 All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 9 January 2013 2 of 16